CGHV27030S Datasheet - MACOM

CGHV27030S GaN HEMT

The CGHV27030S is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT) which offers high efficiency, high gain and wide bandwidth capabilities. The CGHV27030S GaN HEMT devices are ideal for telecommunications applications with frequencies of 700-960 MHz, 1200-1400 MHz, 1800-2.

CGHV27030S Features

* for 50 V in CGHV27030S-AMP1

* 2.5 - 2.7 GHz Operation

* 30 W Typical Output Power

* 20 dB Gain at 5 W PAVE

* -34 dBc ACLR at 5 W PAVE

* 30% efficiency at 5 W PAVE

* High degree of APD and DPD correction can be applied Listing of Available Hardware A

CGHV27030S-MACOM.pdf

CGHV27030S Datasheet Preview — Preview of CGHV27030S PDF

Datasheet Details

Part number:

CGHV27030S

Manufacturer:

MACOM

File Size:

5.42 MB

Description:

Gan hemt.

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TAGS

CGHV27030S CGHV27030S GaN HEMT MACOM

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