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CGHV27030S - GaN HEMT

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MACOM

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CGHV27030S GaN HEMT by MACOM - Datasheet Preview — Datasheet preview – CGHV27030S

Datasheet Details

Part number	CGHV27030S
Manufacturer	MACOM
File Size	5.42 MB
Description	GaN HEMT
Datasheet	CGHV27030S Datasheet
Additional preview pages of the CGHV27030S datasheet.

Product details

Description

The CGHV27030S is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT) which offers high efficiency, high gain and wide bandwidth capabilities.

Features

for 50 V in CGHV27030S-AMP1.
2.5 - 2.7 GHz Operation.
30 W Typical Output Power.
20 dB Gain at 5 W PAVE.
-34 dBc ACLR at 5 W PAVE.
30% efficiency at 5 W PAVE.
High degree of APD and DPD correction can be applied Listing of Available Hardware.

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Published: Dec 30, 2024 |