CGHV27030S GaN HEMT

MACOM

Description

CGHV27030S 30 W, DC - 6.0 GHz, GaN HEMT .
The CGHV27030S is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT) which offers high efficiency, high gain and wide bandwi.

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Datasheet Specifications

Part number: CGHV27030S
Manufacturer: MACOM
File Size: 5.42 MB
Datasheet: CGHV27030S-MACOM.pdf
Description: GaN HEMT

Features

* for 50 V in CGHV27030S-AMP1
* 2.5 - 2.7 GHz Operation
* 30 W Typical Output Power
* 20 dB Gain at 5 W PAVE
* -34 dBc ACLR at 5 W PAVE
* 30% efficiency at 5 W PAVE
* High degree of APD and DPD correction can be applied Listing of Available Hardware A

Applications

* with frequencies of 700-960 MHz, 1200-1400 MHz, 1800-2200 MHz, 2500-2700 MHz, and 3300-3700 MHz at both 50 V and 28 V operations. The CGHV27030S is also ideal for tactical communications applications operating from 20-2500 MHz, including land mobile radios. Additional applications include L-Band RAD

CGHV27030S Distributors

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CGHV27030S GaN HEMT MACOM

MACOM CGHV27030S-like datasheet