CGHV27030S - GaN HEMT
The CGHV27030S is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT) which offers high efficiency, high gain and wide bandwidth capabilities.
The CGHV27030S GaN HEMT devices are ideal for telecommunications applications with frequencies of 700-960 MHz, 1200-1400 MHz, 1800-2
CGHV27030S Features
* for 50 V in CGHV27030S-AMP1
* 2.5 - 2.7 GHz Operation
* 30 W Typical Output Power
* 20 dB Gain at 5 W PAVE
* -34 dBc ACLR at 5 W PAVE
* 30% efficiency at 5 W PAVE
* High degree of APD and DPD correction can be applied Listing of Available Hardware A
