* 2.5 - 2.7 GHz Operation
* 16 dB Gain
* -37 dBc ACLR at 50 W PAVE ober 2012 Rev 0.1
* Oct
* 29 % Efficiency at 50 W PAVE
* High Degree of DPD Correction Can be Applied Subject to change without notice. www.cree.com/rf 1 Absolute Maximum Ratin
CGHV27200 Datasheet (696.21 KB)
CGHV27200
Cree
696.21 KB
Gan hemt.
PRELIMINARY
CGHV27200
200 W, 2500-2700 MHz, GaN HEMT for LTE
Cree’s CGHV27200 is a gallium nitride (GaN) high electron mobility transistor (HE.
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