Datasheet Details
- Part number
- CGHV27200
- Manufacturer
- Cree
- File Size
- 696.21 KB
- Datasheet
- CGHV27200-Cree.pdf
- Description
- GaN HEMT
CGHV27200 Description
PRELIMINARY CGHV27200 200 W, 2500-2700 MHz, GaN HEMT for LTE Cree’s CGHV27200 is a gallium nitride (GaN) high electron mobility transistor (HE.
CGHV27200 Features
* 2.5 - 2.7 GHz Operation
* 16 dB Gain
* -37 dBc ACLR at 50 W PAVE
ober 2012 Rev 0.1
* Oct
* 29 % Efficiency at 50 W PAVE
* High Degree of DPD Correction Can be Applied
Subject to change without notice. www. cree. com/rf
1
Absolute Maximum Ratin
CGHV27200 Applications
* The transistor is supplied in a ceramic/metal flange package. Package Type : 440162 an d 440161 PN: CGHV27 200F and C GHV27200P
Typical Performance Over 2.5 - 2.7 GHz
Parameter Gain @ 47 dBm ACLR @ 47 dBm Drain Efficiency @ 47 dBm 2.5 GHz 15.0 -36.5 29.0
(TC = 25˚C)
2.6 GHz 16.0 -37.5 28.5
of D
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