CGHV27200 Datasheet - Cree

CGHV27200 GaN HEMT

PRELIMINARY CGHV27200 200 W, 2500-2700 MHz, GaN HEMT for LTE Cree’s CGHV27200 is a gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGHV27200 ideal for 2.52.7 GHz LTE and BWA amplifier applications. The transistor is supplied in a ceramic/metal flange package. Package Type : 440162 an d 440161 PN: CGHV27 200F and C GHV27200P Typical Performance Over 2.5 - 2.7 GHz Paramete.

CGHV27200 Features

* 2.5 - 2.7 GHz Operation

* 16 dB Gain

* -37 dBc ACLR at 50 W PAVE ober 2012 Rev 0.1

* Oct

* 29 % Efficiency at 50 W PAVE

* High Degree of DPD Correction Can be Applied Subject to change without notice. www.cree.com/rf 1 Absolute Maximum Ratin

CGHV27200 Datasheet (696.21 KB)

CGHV27200 Datasheet Preview — Preview of CGHV27200 PDF

Datasheet Details

Part number:

CGHV27200

Manufacturer:

Cree

File Size:

696.21 KB

Description:

Gan hemt.

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