CGHV27200 Datasheet - Cree

CGHV27200, GaN HEMT

PRELIMINARY CGHV27200 200 W, 2500-2700 MHz, GaN HEMT for LTE Cree’s CGHV27200 is a gallium nitride (GaN) high electron mobility transistor (HE.

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CGHV27200-Cree.pdf

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Datasheet Details

Part number:

CGHV27200

Manufacturer:

Cree

File Size:

696.21 KB

Description:

GaN HEMT

Features

* 2.5 - 2.7 GHz Operation
* 16 dB Gain
* -37 dBc ACLR at 50 W PAVE ober 2012 Rev 0.1
* Oct
* 29 % Efficiency at 50 W PAVE
* High Degree of DPD Correction Can be Applied Subject to change without notice. www. cree. com/rf 1 Absolute Maximum Ratin

Applications

* The transistor is supplied in a ceramic/metal flange package. Package Type : 440162 an d 440161 PN: CGHV27 200F and C GHV27200P Typical Performance Over 2.5 - 2.7 GHz Parameter Gain @ 47 dBm ACLR @ 47 dBm Drain Efficiency @ 47 dBm 2.5 GHz 15.0 -36.5 29.0 (TC = 25˚C) 2.6 GHz 16.0 -37.5 28.5 of D

CGHV27200 Distributors

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CGHV27200 GaN HEMT Cree

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