Datasheet Details
- Part number
- CGHV22200
- Manufacturer
- Cree
- File Size
- 769.10 KB
- Datasheet
- CGHV22200-Cree.pdf
- Description
- GaN HEMT
CGHV22200 Description
CGHV22200 200 W, 1800-2200 MHz, GaN HEMT for LTE Cree’s CGHV22200 is a gallium nitride (GaN) high electron mobility transistor (HEMT) is designe.
RES, 1/16 W, 0603, 1%, 10.
CGHV22200 Features
* 1.8 - 2.2 GHz Operation
* 18 dB Gain
* -35 dBc ACLR at 50 W PAVE
* 31-35 % Efficiency at 50 W PAVE
* High Degree of DPD Correction Can be Applied
Rev 1.0
* May 2015
Subject to change without notice. www. cree. com/rf
1
Absolute Maximum Ratings
CGHV22200 Applications
* The transistor is input matched and supplied in a ceramic/ metal flange package. PNPa: CckGaHgVe2T2y2p0e0: F44a0n1d6C2GaHndV2424200106P1
Typical Performance Over 1.8 - 2.2 GHz (TC = 25˚C) of Demonstration Amplifier
Parameter
1.8 GHz
2.0 GHz
2.2 GHz
Gain @ 47 dBm
16.6
19.2
18.1
ACLR @ 47
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