CGHV22200 Datasheet, Hemt, Cree

CGHV22200 Features

• Hemt
• 1.8 - 2.2 GHz Operation
• 18 dB Gain
• -35 dBc ACLR at 50 W PAVE
• 31-35 % Efficiency at 50 W PAVE
• High Degree of DPD Correction Can be

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Part number:

CGHV22200

Manufacturer:

Cree

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📄 Datasheet

Description:

Gan hemt. RES, 1/16 W, 0603, 1%, 10.0 OHMS RES, 1/16 W, 0603, 1%, 5.1 OHMS CAP, 470 pF, 5%, 100 V, 0603, X CAP, 1.0 UF, 100 V, 10%, x7R, 121 CA

CGHV22200 Application

• Applications The transistor is input matched and supplied in a ceramic/ metal flange package. PNPa: CckGaHgVe2T2y2p0e0: F44a0n1d6C2GaHndV242420010

TAGS

CGHV22200

Cree

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