CGHV22200 - GaN HEMT

Product Overview

Cree

Datasheet Details

Part number	CGHV22200
Manufacturer	Cree
File Size	769.10 KB
Description	GaN HEMT
Datasheet	CGHV22200 Datasheet
Additional preview pages of the CGHV22200 datasheet.

Product details

Description

RES, 1/16 W, 0603, 1%, 10.0 OHMS RES, 1/16 W, 0603, 1%, 5.1 OHMS CAP, 470 pF, 5%, 100 V, 0603, X CAP, 1.0 UF, 100 V, 10%, x7R, 121 CAP, 100 UF, 20%, 160 V, ELEC CAP, 10 UF, 16 V, TANTALUM, 2312 CAP, 10.0 pF, 5

Features

1.8 - 2.2 GHz Operation.
18 dB Gain.
-35 dBc ACLR at 50 W PAVE.
31-35 % Efficiency at 50 W PAVE.
High Degree of DPD Correction Can be Applied Rev 1.0.
May 2015 Subject to change without notice. www. cree. com/rf 1 Absolute Maximum Ratings (not simultaneous) at 25˚C Case Temperature Parameter Symbol Drain-Source Voltage Gate-to-Source Voltage Storage Temperature Operating Junction Temperature3 Maximum Forward Gate Current Maximum Dr.

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Published: Apr 19, 2016 |