CGHV22200 Datasheet - Cree

CGHV22200, GaN HEMT

CGHV22200 200 W, 1800-2200 MHz, GaN HEMT for LTE Cree’s CGHV22200 is a gallium nitride (GaN) high electron mobility transistor (HEMT) is designe.
RES, 1/16 W, 0603, 1%, 10.

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CGHV22200-Cree.pdf

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Datasheet Details

Part number:

CGHV22200

Manufacturer:

Cree

File Size:

769.10 KB

Description:

GaN HEMT

Features

* 1.8 - 2.2 GHz Operation
* 18 dB Gain
* -35 dBc ACLR at 50 W PAVE
* 31-35 % Efficiency at 50 W PAVE
* High Degree of DPD Correction Can be Applied Rev 1.0
* May 2015 Subject to change without notice. www. cree. com/rf 1 Absolute Maximum Ratings

Applications

* The transistor is input matched and supplied in a ceramic/ metal flange package. PNPa: CckGaHgVe2T2y2p0e0: F44a0n1d6C2GaHndV2424200106P1 Typical Performance Over 1.8 - 2.2 GHz (TC = 25˚C) of Demonstration Amplifier Parameter 1.8 GHz 2.0 GHz 2.2 GHz Gain @ 47 dBm 16.6 19.2 18.1 ACLR @ 47

CGHV22200 Distributors

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CGHV22200 GaN HEMT Cree

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