* 1.8 - 2.2 GHz Operation
* 18 dB Gain
* -35 dBc ACLR at 50 W PAVE
* 31-35 % Efficiency at 50 W PAVE
* High Degree of DPD Correction Can be Applied Rev 1.0
* May 2015 Subject to change without notice. www.cree.com/rf 1 Absolute Maximum Ratings
CGHV22200 Datasheet (769.10 KB)
CGHV22200
Cree
769.10 KB
Gan hemt.
CGHV22200
200 W, 1800-2200 MHz, GaN HEMT for LTE
Cree’s CGHV22200 is a gallium nitride (GaN) high electron mobility transistor (HEMT) is designe.
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