CGHV27060MP GaN HEMT

Cree

Description

CGHV27060MP 60 W, DC - 2700 MHz, 50 V, GaN HEMT for LTE and Pulse Radar Applications Cree’s CGHV27060MP is a 60W gallium nitride (GaN) high electron .

📥 Download Datasheet

CGHV27060MP Datasheet Preview — Preview of CGHV27060MP PDF

Datasheet Specifications

Part number: CGHV27060MP
Manufacturer: Cree
File Size: 915.00 KB
Datasheet: CGHV27060MP-Cree.pdf
Description: GaN HEMT

Features

* - WCDMA
* 2.5 - 2.7 GHz Reference Design Amplifier
* 18 dB Gain at 14 W PAVE
* -35 dBc ACLR at 14 W PAVE
* 33% Efficiency at 14 W PAVE
* High Degree of DPD Correction Can be Applied Features - Pulsed
* 16.5 dB Gain at Pulsed PSAT
* 70%

Applications

* Cree’s CGHV27060MP is a 60W gallium nitride (GaN) high electron mobility transistor (HEMT) housed in a small plastic SMT package 4.4mm x 6.5mm. The transistor is a broadband device with no internal input or output match which allows for the agility to apply to a wide range of frequencies from UHF t

CGHV27060MP Distributors

📁 Related Datasheet

CGHV27030S CGHV14250 CGHV14500F CGHV14800 CGHV14800F1 CGHV1F006S

📌 All Tags

CGHV27060MP GaN HEMT Cree

Cree CGHV27060MP-like datasheet