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CGHV27060MP - GaN HEMT

Key Features

  • - WCDMA.
  • 2.5 - 2.7 GHz Reference Design Amplifier.
  • 18 dB Gain at 14 W PAVE.
  • -35 dBc ACLR at 14 W PAVE.
  • 33% Efficiency at 14 W PAVE.
  • High Degree of DPD Correction Can be Applied Features - Pulsed.
  • 16.5 dB Gain at Pulsed PSAT.
  • 70% Efficiency at Pulsed PSAT.
  • 85 W at Pulsed PSAT Rev 2.0.
  • April 2019 Subject to change without notice. www. cree. com/rf 1 Absolute Maximum Ratings (not simultaneous) at 25˚C Case T.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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CGHV27060MP 60 W, DC - 2700 MHz, 50 V, GaN HEMT for LTE and Pulse Radar Applications Cree’s CGHV27060MP is a 60W gallium nitride (GaN) high electron mobility transistor (HEMT) housed in a small plastic SMT package 4.4mm x 6.5mm. The transistor is a broadband device with no internal input or output match which allows for the agility to apply to a wide range of frequencies from UHF thru 2.7GHz. The CGHV27060MP makes for an excellent transistor for pulsed applications at UHF, L Band or low S Band (<2.7GHz). Additionally, the transistor is well suited for LTE micro basestation amplifiers in the power class of 10 to 15W average power in high efficiency topologies such as Class A/B, F or Doherty amplifiers. PN: CGHV27060MP Typical Performance Over 2.5 - 2.