CGHV27060MP Description
CGHV27060MP 60 W, DC - 2700 MHz, 50 V, GaN HEMT for LTE and Pulse Radar Applications Cree’s CGHV27060MP is a 60W gallium nitride (GaN) high electron mobility transistor (HEMT) housed in a small plastic SMT package 4.4mm x 6.5mm. The transistor is a broadband device with no internal input or output match which allows for the agility to apply to a wide range of frequencies from UHF thru 2.7GHz. The CGHV27060MP makes...
CGHV27060MP Key Features
- 2.7 GHz Reference Design Amplifier
- 18 dB Gain at 14 W PAVE
- 35 dBc ACLR at 14 W PAVE
- 33% Efficiency at 14 W PAVE
- High Degree of DPD Correction Can be Applied
- Pulsed
- 16.5 dB Gain at Pulsed PSAT
- 70% Efficiency at Pulsed PSAT
- 85 W at Pulsed PSAT
- April 2019