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GNP2070TD-Z - 650V Enhancement mode GaN HEMT

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Features

  • 650V E-mode GaN HEMT 70mΩ Resistance 4.7nC Gate Charge Datasheet Package Information W (Typ) × D (Typ) × H (Max) 11.68 mm × 9.9 mm × 2.4 mm TOLL-8N.

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Datasheet Details

Part number GNP2070TD-Z
Manufacturer ROHM
File Size 3.69 MB
Description 650V Enhancement mode GaN HEMT
Datasheet download datasheet GNP2070TD-Z Datasheet
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650V Enhancement mode GaN HEMT GNP2070TD-Z Features 650V E-mode GaN HEMT 70mΩ Resistance 4.7nC Gate Charge Datasheet Package Information W (Typ) × D (Typ) × H (Max) 11.68 mm × 9.9 mm × 2.4 mm TOLL-8N Application High Switching Frequency Converter High Density Converter Key Performance Parameters Symbol Values VDS,max 650 ID 26.6 ID,pulse 53.2 RDS(on),typ 70 Qg 4.7 Qoss @400V 44 Qrr 0 Unit V A A mΩ nC nC nC Drain Contact 8 7 1 Gate 8 Kelvin Source 7 Drain Drain Contact Source 1,2,3,4,5,6 Ordering Information Ordering Code Package Ordering Unit (pcs) GNP2070TD-ZTR TOLL-8N 2,000 ‘EcoGaN’ is a trademark or a registered trademark of ROHM Co., Ltd. Marking GNP2070 www.rohm.com © 2025 ROHM Co., Ltd. All rights reserved.
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