CGHV14250 Datasheet - Cree

CGHV14250, GaN HEMT

CGHV14250 250 W, 1200 - 1400 MHz, GaN HEMT for L-Band Radar Systems Cree’s CGHV14250 is a gallium nitride (GaN) high electron mobility transistor (HE.
R1 RES, 1/16W, 0603, 1%, 562 OHMS R2 R3 L1 C1, C23 RES, 5.

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CGHV14250-Cree.pdf

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Datasheet Details

Part number:

CGHV14250

Manufacturer:

Cree

File Size:

722.26 KB

Description:

GaN HEMT

Features

* Reference design amplifier 1.2 - 1.4 GHz Operation
* FET Tuning range UHF through 1800 MHz
* 330 W Typical Output Power
* 18 dB Power Gain
* 77% Typical Drain Efficiency

Applications

* The transistor could be utilized for band specific applications ranging from UHF through 1800 MHz. The package options are ceramic/metal flange and pill package. Package Type:P4N4:0C1G62H,V41440215601 Typical Performance Over 1.2-1.4 GHz (TC = 25˚C) of Demonstration Amplifier Parameter 1.2 GHz

CGHV14250 Distributors

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CGHV14250 GaN HEMT Cree

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