CGHV14250 Datasheet - Cree

CGHV14250 GaN HEMT

R1 RES, 1/16W, 0603, 1%, 562 OHMS R2 R3 L1 C1, C23 RES, 5.1 OHM, +/-1%, 1/16W, 0603 RES, 1/16W, 0603, 1%, 4700 OHMS INDUCTOR, CHIP, 6.8 nH, 0603 SMT CAP, 27pF, +/- 5%, 250V, 0805, ATC 600F C2 CAP, 2.0pF, +/- 0.1pF, 0603, ATC C3, C4 CAP, 0.5pF, +/-0.05pF, 0805, ATC 600F C5,C6 CAP, 1.0pF, +/-0.

CGHV14250 250 W, 1200 - 1400 MHz, GaN HEMT for L-Band Radar Systems Cree’s CGHV14250 is a gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically with high efficiency, high gain and wide bandwidth capabilities, which makes the CGHV14250 ideal for 1.2 - 1.4 GHz L-Band radar amplifier applications. The transistor could be utilized for band specific applications ranging from UHF through 1800 MHz. The package options are ceramic/metal flange and pill package. Package T.

CGHV14250 Features

* Reference design amplifier 1.2 - 1.4 GHz Operation

* FET Tuning range UHF through 1800 MHz

* 330 W Typical Output Power

* 18 dB Power Gain

* 77% Typical Drain Efficiency

CGHV14250-Cree.pdf