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CGHV14800F GaN HEMT

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Description

CGHV14800F 800 W, 1200 - 1400 MHz, 50 V, GaN HEMT for L-Band Radar Systems Cree’s CGHV14800 is a gallium nitride (GaN) high electron mobility transist.

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Datasheet Specifications

Part number
CGHV14800F
Manufacturer
Cree
File Size
873.68 KB
Datasheet
CGHV14800F-Cree.pdf
Description
GaN HEMT

Features

* Reference design amplifier 1.2 - 1.4 GHz Operation
* 910 W Typical Output Power
* 14 dB Power Gain
* 70% Typical Drain Efficiency

Applications

* such as air traffic control (ATC) radar, weather radar, penetration radars, antimissile system radars, target tracking radars and long range survelliance radars. The GaN HEMT typically operates at 50 V, typically delivering >65% drain efficiency. The package options are ceramic/metal flange package

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