Datasheet4U Logo Datasheet4U.com

CGHV14800F

GaN HEMT

CGHV14800F Features

* Reference design amplifier 1.2 - 1.4 GHz Operation

* 910 W Typical Output Power

* 14 dB Power Gain

* 70% Typical Drain Efficiency

CGHV14800F Datasheet (873.68 KB)

Preview of CGHV14800F PDF

Datasheet Details

Part number:

CGHV14800F

Manufacturer:

Cree

File Size:

873.68 KB

Description:

Gan hemt.
CGHV14800F 800 W, 1200 - 1400 MHz, 50 V, GaN HEMT for L-Band Radar Systems Cree’s CGHV14800 is a gallium nitride (GaN) high electron mobility transist.

📁 Related Datasheet

CGHV14800 GaN HEMT (Cree)

CGHV14800 GaN HEMT (Wolfspeed)

CGHV14800F1 800W GaN Transistor (Wolfspeed)

CGHV14250 GaN HEMT (Cree)

CGHV14250 GaN HEMT (Wolfspeed)

CGHV14500 GaN HEMT (Cree)

CGHV14500F GaN HEMT (MACOM)

CGHV1F006S GaN HEMT (Cree)

CGHV1F006S GaN HEMT (Wolfspeed)

CGHV1F025S GaN HEMT (MACOM)

TAGS

CGHV14800F GaN HEMT Cree

Image Gallery

CGHV14800F Datasheet Preview Page 2 CGHV14800F Datasheet Preview Page 3

CGHV14800F Distributor