CGHV14800F Datasheet - Cree

CGHV14800F, GaN HEMT

CGHV14800F 800 W, 1200 - 1400 MHz, 50 V, GaN HEMT for L-Band Radar Systems Cree’s CGHV14800 is a gallium nitride (GaN) high electron mobility transist.

datasheet Preview Page 1 from Datasheet4u.com

CGHV14800F-Cree.pdf

CGHV14800F Datasheet Preview — Preview of CGHV14800F PDF

Datasheet Details

Part number:

CGHV14800F

Manufacturer:

Cree

File Size:

873.68 KB

Description:

GaN HEMT

Features

* Reference design amplifier 1.2 - 1.4 GHz Operation
* 910 W Typical Output Power
* 14 dB Power Gain
* 70% Typical Drain Efficiency

Applications

* such as air traffic control (ATC) radar, weather radar, penetration radars, antimissile system radars, target tracking radars and long range survelliance radars. The GaN HEMT typically operates at 50 V, typically delivering >65% drain efficiency. The package options are ceramic/metal flange package

CGHV14800F Distributors

📁 Related Datasheet

CGHV14800F1 CGHV14500F CGHV1F025S CGHV1J006D CGHV1J025D CGHV1J070D

📌 All Tags

CGHV14800F GaN HEMT Cree

Cree CGHV14800F-like datasheet