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CGHV14800 Datasheet - Cree

CGHV14800 - GaN HEMT

CGHV14800 800 W, 1200 - 1400 MHz, 50 V, GaN HEMT for L-Band Radar Systems Cree’s CGHV14800 is a gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically with high efficiency, high gain and wide bandwidth capabilities, which makes the CGHV14800 ideal for 1.2 - 1.4 GHz pulsed L-Band radar amplifier applications, such as air traffic control (ATC) radar, weather radar, penetration radars, antimissile system radars, target tracking radars and long range survelliance radars

CGHV14800-Cree.pdf

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Datasheet Details

Part number:

CGHV14800

Manufacturer:

Cree

File Size:

381.78 KB

Description:

Gan hemt.

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