CGHV27100 GaN HEMT

Cree

Description

CGHV27100 100 W, 2500-2700 MHz, 50 V, GaN HEMT for LTE Cree’s CGHV27100 is a gallium nitride (GaN) high electron mobility transistor (HEMT) is d.
RES, 10 OHM, +/- 1%, 1/16 W, 0603 CAP, 5.

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Datasheet Specifications

Part number: CGHV27100
Manufacturer: Cree
File Size: 703.21 KB
Datasheet: CGHV27100-Cree.pdf
Description: GaN HEMT

Features

* 2.5 - 2.7 GHz Operation
* 18.0 dB Gain
* -37 dBc ACLR at 25 W PAVE
* 33 % Efficiency at 25 W PAVE
* High Degree of DPD Correction Can be Applied Rev 1.0
* May 2015 Subject to change without notice. www. cree. com/rf 1 Absolute Maximum Ratings

Applications

* The transistor is input matched and supplied in a ceramic/ metal pill and flange packages. PNPa: CckGaHgVe2T7y1p0e0: F44a0n1d6C2GaHndV2474100106P1 Typical Performance Over 2.5 - 2.7 GHz (TC = 25˚C) of Demonstration Amplifier Parameter 2.5 GHz 2.6 GHz 2.7 GHz Gain @ 44 dBm 18.1 18.0 17.9

CGHV27100 Distributors

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CGHV27100 GaN HEMT Cree

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