CGHV27100 Datasheet, Hemt, Cree

CGHV27100 Features

• Hemt
• 2.5 - 2.7 GHz Operation
• 18.0 dB Gain
• -37 dBc ACLR at 25 W PAVE
• 33 % Efficiency at 25 W PAVE
• High Degree of DPD Correction Can be A

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Part number:

CGHV27100

Manufacturer:

Cree

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703.21kb

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📄 Datasheet

Description:

Gan hemt. RES, 10 OHM, +/- 1%, 1/16 W, 0603 CAP, 5.6 pF, +/- 0.25 pF, 0603, ATC CAP, 27 pF, +/-5%, 0603, ATC CAP, 10.0 pF, +/-5%, 0603, ATC CAP

CGHV27100 Application

• Applications The transistor is input matched and supplied in a ceramic/ metal pill and flange packages. PNPa: CckGaHgVe2T7y1p0e0: F44a0n1d6C2GaHnd

TAGS

CGHV27100

Cree

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