Datasheet Details
- Part number
- CGHV27100
- Manufacturer
- Cree
- File Size
- 703.21 KB
- Datasheet
- CGHV27100-Cree.pdf
- Description
- GaN HEMT
CGHV27100 Description
CGHV27100 100 W, 2500-2700 MHz, 50 V, GaN HEMT for LTE Cree’s CGHV27100 is a gallium nitride (GaN) high electron mobility transistor (HEMT) is d.
RES, 10 OHM, +/- 1%, 1/16 W, 0603 CAP, 5.
CGHV27100 Features
* 2.5 - 2.7 GHz Operation
* 18.0 dB Gain
* -37 dBc ACLR at 25 W PAVE
* 33 % Efficiency at 25 W PAVE
* High Degree of DPD Correction Can be Applied
Rev 1.0
* May 2015
Subject to change without notice. www. cree. com/rf
1
Absolute Maximum Ratings
CGHV27100 Applications
* The transistor is input matched and supplied in a ceramic/ metal pill and flange packages. PNPa: CckGaHgVe2T7y1p0e0: F44a0n1d6C2GaHndV2474100106P1
Typical Performance Over 2.5 - 2.7 GHz (TC = 25˚C) of Demonstration Amplifier
Parameter
2.5 GHz
2.6 GHz
2.7 GHz
Gain @ 44 dBm
18.1
18.0
17.9
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