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CGHV27100

GaN HEMT

CGHV27100 Features

* 2.5 - 2.7 GHz Operation

* 18.0 dB Gain

* -37 dBc ACLR at 25 W PAVE

* 33 % Efficiency at 25 W PAVE

* High Degree of DPD Correction Can be Applied Rev 1.0

* May 2015 Subject to change without notice. www.cree.com/rf 1 Absolute Maximum Ratings

CGHV27100 General Description

RES, 10 OHM, +/- 1%, 1/16 W, 0603 CAP, 5.6 pF, +/- 0.25 pF, 0603, ATC CAP, 27 pF, +/-5%, 0603, ATC CAP, 10.0 pF, +/-5%, 0603, ATC CAP, 8.2 pF, +/-0.25 pF, 0603, ATC CAP, 470 pF, 5%, 100 V, 0603, X CAP, 33000 pF, 0805, 100 V, X7R CAP, 10 UF, 16 V, TANTALUM CAP, 27 pF, +/-5%, 250 V, 0805, ATC 600 F CA.

CGHV27100 Datasheet (703.21 KB)

Preview of CGHV27100 PDF

Datasheet Details

Part number:

CGHV27100

Manufacturer:

Cree

File Size:

703.21 KB

Description:

Gan hemt.
CGHV27100 100 W, 2500-2700 MHz, 50 V, GaN HEMT for LTE Cree’s CGHV27100 is a gallium nitride (GaN) high electron mobility transistor (HEMT) is d.

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TAGS

CGHV27100 GaN HEMT Cree

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