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CGHV27015S GaN HEMT

CGHV27015S Description

CGHV27015S 15 W, DC - 6.0 GHz, 50 V, GaN HEMT Cree’s CGHV27015S is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT) desi.
R1 R2 R3, R4 C1, C4 C2 C3 C8 C13 RES, 332,OHM, +/- 1%, Vishay RES, 22.

CGHV27015S Features

* for 50 V in CGHV27015S-AMP1
* 2.4 - 2.7 GHz Operation
* 15 W Typical Output Power
* 21 dB Gain at 2.5 W PAVE
* -38 dBc ACLR at 2.5 W PAVE
* 32% efficiency at 2.5 W PAVE
* High degree of APD and DPD correction can be applied Rev 2.0

CGHV27015S Applications

* The CGHV27015S GaN HEMT device is unmatched so it is suitable for power amplifier applications from 10MHz through 6000 MHz, such as tactical communications, CATV, UAV data links, as well as a driver stage amplifier for RADAR, EW, and SatCom devices. At a Vdd of 50 V, the device provide 2.5W of a

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Datasheet Details

Part number
CGHV27015S
Manufacturer
Cree
File Size
1.08 MB
Datasheet
CGHV27015S-Cree.pdf
Description
GaN HEMT

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