CGHV27015S GaN HEMT

Cree

Description

CGHV27015S 15 W, DC - 6.0 GHz, 50 V, GaN HEMT Cree’s CGHV27015S is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT) desi.
R1 R2 R3, R4 C1, C4 C2 C3 C8 C13 RES, 332,OHM, +/- 1%, Vishay RES, 22.

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Datasheet Specifications

Part number: CGHV27015S
Manufacturer: Cree
File Size: 1.08 MB
Datasheet: CGHV27015S-Cree.pdf
Description: GaN HEMT

Features

* for 50 V in CGHV27015S-AMP1
* 2.4 - 2.7 GHz Operation
* 15 W Typical Output Power
* 21 dB Gain at 2.5 W PAVE
* -38 dBc ACLR at 2.5 W PAVE
* 32% efficiency at 2.5 W PAVE
* High degree of APD and DPD correction can be applied Rev 2.0

Applications

* The CGHV27015S GaN HEMT device is unmatched so it is suitable for power amplifier applications from 10MHz through 6000 MHz, such as tactical communications, CATV, UAV data links, as well as a driver stage amplifier for RADAR, EW, and SatCom devices. At a Vdd of 50 V, the device provide 2.5W of a

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CGHV27015S GaN HEMT Cree

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