CGHV27015S Datasheet, Hemt, Cree

CGHV27015S Features

• Hemt for 50 V in CGHV27015S-AMP1
• 2.4 - 2.7 GHz Operation
• 15 W Typical Output Power
• 21 dB Gain at 2.5 W PAVE
• -38 dBc ACLR at 2.5 W PAVE

PDF File Details

Part number:

CGHV27015S

Manufacturer:

Cree

File Size:

1.08MB

Download:

📄 Datasheet

Description:

Gan hemt. R1 R2 R3, R4 C1, C4 C2 C3 C8 C13 RES, 332,OHM, +/- 1%, Vishay RES, 22.6,OHM, +/- 1%, 1/16W, 0603 RES, 2.2,OHM, +/- 1%, 1/16W, 0603

CGHV27015S Application

• Applications The CGHV27015S GaN HEMT device is unmatched so it is suitable for power amplifier applications from 10MHz through 6000 MHz, such as

TAGS

CGHV27015S

Cree

📁 Related Datasheet

CGHV27015S - GaN HEMT (Wolfspeed)
CGHV27015S 15 W, DC - 6.0 GHz, 50 V, GaN HEMT Description Wolfspeed’s CGHV27015S is an unmatched, gallium nitride (GaN) high electron mobility transis.

CGHV27030S - GaN HEMT (CREE)
CGHV27030S 30 W, DC - 6.0 GHz, GaN HEMT The CGHV27030S is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT) which offers .

CGHV27030S - GaN HEMT (MACOM)
CGHV27030S 30 W, DC - 6.0 GHz, GaN HEMT Description The CGHV27030S is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT) whi.

CGHV27060MP - GaN HEMT (Cree)
CGHV27060MP 60 W, DC - 2700 MHz, 50 V, GaN HEMT for LTE and Pulse Radar Applications Cree’s CGHV27060MP is a 60W gallium nitride (GaN) high electron .

CGHV27100 - GaN HEMT (Cree)
CGHV27100 100 W, 2500-2700 MHz, 50 V, GaN HEMT for LTE Cree’s CGHV27100 is a gallium nitride (GaN) high electron mobility transistor (HEMT) is d.

CGHV27200 - GaN HEMT (Cree)
PRELIMINARY CGHV27200 200 W, 2500-2700 MHz, GaN HEMT for LTE Cree’s CGHV27200 is a gallium nitride (GaN) high electron mobility transistor (HE.

CGHV22100 - GaN HEMT (Cree)
CGHV22100 100 W, 1800-2200 MHz, GaN HEMT for LTE Cree’s CGHV22100 is a gallium nitride (GaN) high electron mobility transistor (HEMT) is designe.

CGHV22200 - GaN HEMT (Cree)
CGHV22200 200 W, 1800-2200 MHz, GaN HEMT for LTE Cree’s CGHV22200 is a gallium nitride (GaN) high electron mobility transistor (HEMT) is designe.

CGHV14250 - GaN HEMT (Cree)
CGHV14250 250 W, 1200 - 1400 MHz, GaN HEMT for L-Band Radar Systems Cree’s CGHV14250 is a gallium nitride (GaN) high electron mobility transistor (HE.

CGHV14250 - GaN HEMT (Wolfspeed)
CGHV14250 250 W, DC - 1.6 GHz, GaN HEMT for L-Band Radar Systems Description Wolfspeed’s CGHV14250 is a gallium nitride (GaN) high electron mobility t.