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CGHV27015S Datasheet - Cree

GaN HEMT

CGHV27015S Features

* for 50 V in CGHV27015S-AMP1

* 2.4 - 2.7 GHz Operation

* 15 W Typical Output Power

* 21 dB Gain at 2.5 W PAVE

* -38 dBc ACLR at 2.5 W PAVE

* 32% efficiency at 2.5 W PAVE

* High degree of APD and DPD correction can be applied Rev 2.0

CGHV27015S General Description

R1 R2 R3, R4 C1, C4 C2 C3 C8 C13 RES, 332,OHM, +/- 1%, Vishay RES, 22.6,OHM, +/- 1%, 1/16W, 0603 RES, 2.2,OHM, +/- 1%, 1/16W, 0603 CAP, 27pF, +/- 5%, 0603, ATC CAP, 2.0pF,+/-0.1pF, 0603 ATC CAP, 0.1pF,+/-0.05 pF, 0603, ATC CAP, 6.2pF, +/-0.1pF, 0603, ATC CAP, 10pF +/-5%, 0603, ATC C6, C11 CAP, 3.

CGHV27015S Datasheet (1.08 MB)

Preview of CGHV27015S PDF

Datasheet Details

Part number:

CGHV27015S

Manufacturer:

Cree

File Size:

1.08 MB

Description:

Gan hemt.
CGHV27015S 15 W, DC - 6.0 GHz, 50 V, GaN HEMT Cree’s CGHV27015S is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT) desi.

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CGHV27015S GaN HEMT Cree

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