Datasheet Details
- Part number
- CGHV40030
- Manufacturer
- MACOM
- File Size
- 1.11 MB
- Datasheet
- CGHV40030-MACOM.pdf
- Description
- GaN HEMT
CGHV40030 Description
CGHV40030 30 W, DC - 6 GHz, 50 V, GaN HEMT .
The CGHV40030 is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and.
CGHV40030 Features
* Up to 6 GHz Operation
* 30 W Typical Output Power
* 16 dB Gain
CGHV40030 Applications
* The datasheet specifications are based on a 0.96 - 1.4 GHz amplifier. The CGHV40030 operates on a 50 volt rail circuit while housed in a 2-lead flange or pill package. Typical Performance 0.96 - 1.4 GHz (TC = 25ºC), 50 V
Parameter Gain @ PSAT Saturated Output Power Drain Efficiency @ PSAT
0.96 G
📁 Related Datasheet
📌 All Tags