Part number:
CGHV40030
Manufacturer:
MACOM
File Size:
1.11 MB
Description:
Gan hemt.
* Up to 6 GHz Operation
* 30 W Typical Output Power
* 16 dB Gain
* Application circuit for 0.96 - 1.4 GHz
* 70% Efficiency at PSAT
* 50 V Operation Listing of Available Hardware Application Circuits / Demonstration Circuits Application Circuit CGHV40
CGHV40030
MACOM
1.11 MB
Gan hemt.
📁 Related Datasheet
CGHV40030 - GaN HEMT
(Cree)
CGHV40030
30 W, DC - 6 GHz, 50 V, GaN HEMT
Description
Cree’s CGHV40030 is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEM.
CGHV40030 - GaN HEMT
(Wolfspeed)
CGHV40030
30 W, DC - 6 GHz, 50 V, GaN HEMT
Description
Wolfspeed’s CGHV40030 is an unmatched, gallium nitride (GaN) high electron mobility transistor .
CGHV40050 - GaN HEMT
(MACOM)
CGHV40050
50 W, DC - 4.0 GHz, 50 V, GaN HEMT
Description
The CGHV40050 is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT).
CGHV40050 - GaN HEMT
(Cree)
CGHV40050
50 W, DC - 4.0 GHz, 50 V, GaN HEMT
Cree’s CGHV40050 is an unmatched, gallium nitride (GaN) high electron
mobility transistor (HEMT). The C.
CGHV40100 - 100W GaN HEMT
(MACOM)
CGHV40100
100 W, DC - 3.0 GHz, 50 V, GaN HEMT
Description
The CGHV40100 is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT.
CGHV40100 - GaN HEMT
(Cree)
CGHV40100
100 W, DC - 3.0 GHz, 50 V, GaN HEMT
Cree’s CGHV40100 is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT). The CG.
CGHV40100 - GaN HEMT
(Wolfspeed)
CGHV40100
100 W, DC - 3.0 GHz, 50 V, GaN HEMT
Description
Wolfspeed's CGHV40100 is an unmatched, gallium nitride (GaN) high electron mobility transist.
CGHV40180F - GaN HEMT
(Cree)
CGHV40180F
180 W, DC - 2000 MHz, 50 V, GaN HEMT
Cree’s CGHV40180F is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT). The.
