CGHV40030 - GaN HEMT
The CGHV40030 is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities.
The device can be deployed for L-, S- and C-Band amplifier applications.
The datasheet specifications are based on a 0.9
CGHV40030 Features
* Up to 6 GHz Operation
* 30 W Typical Output Power
* 16 dB Gain
* Application circuit for 0.96 - 1.4 GHz
* 70% Efficiency at PSAT
* 50 V Operation Listing of Available Hardware Application Circuits / Demonstration Circuits Application Circuit CGHV40
