CGHV40180F - GaN HEMT
CGHV40180F 180 W, DC - 2000 MHz, 50 V, GaN HEMT Cree’s CGHV40180F is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT).
The CGHV40180F, operating from a 50 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave applications.
GaN HEMTs offer high efficiency, high gain and wide bandwidth capabilities making the CGHV40180F ideal for linear and compressed amplifier circuits.
The transistor is available in a 2-lead flange package.
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CGHV40180F Features
* APPLICATIONS
* Up to 2000 MHz Operation
* 24 dB Small Si
