Datasheet Specifications
- Part number
- CGHV40180F
- Manufacturer
- Cree
- File Size
- 1.22 MB
- Datasheet
- CGHV40180F-Cree.pdf
- Description
- GaN HEMT
Description
CGHV40180F 180 W, DC - 2000 MHz, 50 V, GaN HEMT Cree’s CGHV40180F is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT).The.
Applications
* GaN HEMTs offer high efficiency, high gain and wide bandwidth capabilities making the CGHV40180F ideal for linear and compressed amplifier circuits. The transistor is available in a 2-lead flange package. PackaPgNe:TCyGpeHsV: 4404108202F3 Typical Performance Over 800 MHz - 1000 MHz (TC = 25˚C), 5CGHV40180F Distributors
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