* APPLICATIONS
* Up to 2000 MHz Operation
* 24 dB Small Si
CGHV40180F Datasheet (1.22 MB)
CGHV40180F
Cree
1.22 MB
Gan hemt.
CGHV40180F 180 W, DC - 2000 MHz, 50 V, GaN HEMT Cree’s CGHV40180F is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT). The.
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