CGHV40180F Datasheet - Cree

CGHV40180F, GaN HEMT

CGHV40180F 180 W, DC - 2000 MHz, 50 V, GaN HEMT Cree’s CGHV40180F is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT).The.

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CGHV40180F-Cree.pdf

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Datasheet Details

Part number:

CGHV40180F

Manufacturer:

Cree

File Size:

1.22 MB

Description:

GaN HEMT

Applications

* GaN HEMTs offer high efficiency, high gain and wide bandwidth capabilities making the CGHV40180F ideal for linear and compressed amplifier circuits. The transistor is available in a 2-lead flange package. PackaPgNe:TCyGpeHsV: 4404108202F3 Typical Performance Over 800 MHz - 1000 MHz (TC = 25˚C), 5

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CGHV40180F GaN HEMT Cree

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