Datasheet Specifications
- Part number
- CGHV1J006D
- Manufacturer
- Cree
- File Size
- 461.32 KB
- Datasheet
- CGHV1J006D-Cree.pdf
- Description
- GaN HEMT Die
Description
CGHV1J006D 6 W, 18.0 GHz, GaN HEMT Die Cree’s CGHV1J006D is a high voltage gallium nitride (GaN) High Electron Mobility Transistor (HEMT) on a silicon.
CGHV1J006D Distributors
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