CGHV40100 - 100W GaN HEMT
The CGHV40100 is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT).
The CGHV40100, operating from a 50 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave applications.
GaN HEMTs offer high efficiency, high gain and wide bandwidth capab
CGHV40100 Features
* Up to 3 GHz Operation
* 100 W Typical Output Power
* 17.5 dB Small Signal Gain at 2.0 GHz
* Application Circuit for 0.5 - 2.5 GHz
* 55% Efficiency at PSAT
* 50 V Operation Package Types: 440193 & 440206 PN: CGHV40100F & CGHV40100P Typical Performan
