Part number:
CGHV40100
Manufacturer:
MACOM
File Size:
1.04 MB
Description:
100w gan hemt.
* Up to 3 GHz Operation
* 100 W Typical Output Power
* 17.5 dB Small Signal Gain at 2.0 GHz
* Application Circuit for 0.5 - 2.5 GHz
* 55% Efficiency at PSAT
* 50 V Operation Package Types: 440193 & 440206 PN: CGHV40100F & CGHV40100P Typical Performan
CGHV40100
MACOM
1.04 MB
100w gan hemt.
📁 Related Datasheet
CGHV40100 - GaN HEMT
(Cree)
CGHV40100
100 W, DC - 3.0 GHz, 50 V, GaN HEMT
Cree’s CGHV40100 is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT). The CG.
CGHV40100 - GaN HEMT
(Wolfspeed)
CGHV40100
100 W, DC - 3.0 GHz, 50 V, GaN HEMT
Description
Wolfspeed's CGHV40100 is an unmatched, gallium nitride (GaN) high electron mobility transist.
CGHV40180F - GaN HEMT
(Cree)
CGHV40180F
180 W, DC - 2000 MHz, 50 V, GaN HEMT
Cree’s CGHV40180F is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT). The.
CGHV40180F - GaN HEMT
(MACOM)
CGHV40180F
180 W, DC - 2.0 GHz, 50 V, GaN HEMT
Description
The CGHV40180F is an unmatched, gallium nitride (GaN) high electron mobility transistor (H.
CGHV40180P - 18W GaN HEMT
(MACOM)
CGHV40180P
180 W, DC - 2.0 GHz, 50 V, GaN HEMT
Description
The CGHV40180P is an unmatched, gallium nitride (GaN) high electron mobility transistor (HE.
CGHV40030 - GaN HEMT
(MACOM)
CGHV40030
30 W, DC - 6 GHz, 50 V, GaN HEMT
Description
The CGHV40030 is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT) d.
CGHV40030 - GaN HEMT
(Cree)
CGHV40030
30 W, DC - 6 GHz, 50 V, GaN HEMT
Description
Cree’s CGHV40030 is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEM.
CGHV40030 - GaN HEMT
(Wolfspeed)
CGHV40030
30 W, DC - 6 GHz, 50 V, GaN HEMT
Description
Wolfspeed’s CGHV40030 is an unmatched, gallium nitride (GaN) high electron mobility transistor .
