CGHV40100 Datasheet - MACOM

CGHV40100 100W GaN HEMT

The CGHV40100 is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT). The CGHV40100, operating from a 50 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave applications. GaN HEMTs offer high efficiency, high gain and wide bandwidth capab.

CGHV40100 Features

* Up to 3 GHz Operation

* 100 W Typical Output Power

* 17.5 dB Small Signal Gain at 2.0 GHz

* Application Circuit for 0.5 - 2.5 GHz

* 55% Efficiency at PSAT

* 50 V Operation Package Types: 440193 & 440206 PN: CGHV40100F & CGHV40100P Typical Performan

CGHV40100-MACOM.pdf