CGHV96050F2 Datasheet - Wolfspeed

CGHV96050F2 GaN HEMT

Wolfspeed’s CGHV96050F2 is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT) on Silicon Carbide (SiC) substrates. This GaN Internally Matched (IM) FET offers excellent power added efficiency in comparison to other technologies. GaN has superior properties compared to silicon or galliu.

CGHV96050F2 Features

* 8.4 - 9.6 GHz Operation

* 80 W POUT typical

* 10 dB Power Gain

* 55% Typical PAE

* 50 Ohm Internally Matched

CGHV96050F2-Wolfspeed.pdf