CGHV96050F2

GaN HEMT

Wolfspeed

CGHV96050F2 Features

* 8.4 - 9.6 GHz Operation

* 80 W POUT typical

* 10 dB Power Gain

* 55% Typical PAE

* 50 Ohm Internally Matched

CGHV96050F2 General Description

Wolfspeed’s CGHV96050F2 is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT) on Silicon Carbide (SiC) substrates. This GaN Internally Matched (IM) FET offers excellent power added efficiency in comparison to other technologies. GaN has superior properties compared to silicon or galliu.

CGHV96050F2 Datasheet (1.58 MB)

CGHV96050F2 Datasheet Preview — Preview of CGHV96050F2 PDF

Datasheet Details

Part number:

CGHV96050F2

Manufacturer:

Wolfspeed

File Size:

1.58 MB

Description:

Gan hemt.

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CGHV96050F2 GaN HEMT Wolfspeed

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CGHV96050F2 Features

CGHV96050F2 General Description

Datasheet Details

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Description:

CGHV96050F2 Distributor