CGHV96050F1 Datasheet - CREE

CGHV96050F1 Input/Output Matched GaN HEMT

Cree’s CGHV96050F1 is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT) on Silicon Carbide (SiC) substrates. This GaN Internally Matched (IM) FET offers excellent power added efficiency in comparison to other technologies. GaN has superior properties compared to silicon or gallium ars.

CGHV96050F1 Features

* 7.9 - 8.4 GHz Operation

* 80 W POUT typical >13 dB Power Gain

* 33% Typical PAE

* 50 Ohm Internally Matched

CGHV96050F1-CREE.pdf