Datasheet Details
- Part number
- CGHV96050F1
- Manufacturer
- CREE
- File Size
- 1.59 MB
- Datasheet
- CGHV96050F1-CREE.pdf
- Description
- Input/Output Matched GaN HEMT
CGHV96050F1 Description
CGHV96050F1 50 W, 7.9 - 9.6 GHz, 50-ohm, Input/Output Matched GaN HEMT .
Cree’s CGHV96050F1 is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT) on Silicon Carbide (SiC) substrates.
CGHV96050F1 Features
* 7.9 - 8.4 GHz Operation
* 80 W POUT typical >13 dB Power Gain
* 33% Typical PAE
* 50 Ohm Internally Matched
CGHV96050F1 Applications
* Satellite Communication
* Terrestrial Broadband
Large Signal Models Available for ADS and MWO Rev 2.2 - May 2020
4600 Silicon Drive | Durham, NC 27703 | wolfspeed. com
CGHV96050F1
Absolute Maximum Ratings (not simultaneous)
Parameter Drain-source Voltage Gate-source Voltage Pow
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