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CGHV96050F1 Datasheet - CREE

CGHV96050F1 - Input/Output Matched GaN HEMT

Cree’s CGHV96050F1 is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT) on Silicon Carbide (SiC) substrates.

This GaN Internally Matched (IM) FET offers excellent power added efficiency in comparison to other technologies.

GaN has superior properties compared to silicon or gallium ars

CGHV96050F1 Features

* 7.9 - 8.4 GHz Operation

* 80 W POUT typical >13 dB Power Gain

* 33% Typical PAE

* 50 Ohm Internally Matched

CGHV96050F1-CREE.pdf

Preview of CGHV96050F1 PDF
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Datasheet Details

Part number:

CGHV96050F1

Manufacturer:

CREE

File Size:

1.59 MB

Description:

Input/output matched gan hemt.

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