CGHV96050F1 Datasheet, Hemt, CREE

CGHV96050F1 Features

• Hemt
• 7.9 - 8.4 GHz Operation
• 80 W POUT typical >13 dB Power Gain
• 33% Typical PAE
• 50 Ohm Internally Matched
• <0.1 dB Power Dro

PDF File Details

Part number:

CGHV96050F1

Manufacturer:

CREE

File Size:

1.59MB

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📄 Datasheet

Description:

Input/output matched gan hemt. Cree’s CGHV96050F1 is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT) on Silicon Carbide (SiC) substrates. This GaN

CGHV96050F1 Application

• Applications
• Satellite Communication
• Terrestrial Broadband Large Signal Models Available for ADS and MWO Rev 2.2 - May 2020 46

TAGS

CGHV96050F1

CREE

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