CGHV96050F1

Input/Output Matched GaN HEMT

CREE

CGHV96050F1 Features

* 7.9 - 8.4 GHz Operation

* 80 W POUT typical >13 dB Power Gain

* 33% Typical PAE

* 50 Ohm Internally Matched

CGHV96050F1 General Description

Cree’s CGHV96050F1 is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT) on Silicon Carbide (SiC) substrates. This GaN Internally Matched (IM) FET offers excellent power added efficiency in comparison to other technologies. GaN has superior properties compared to silicon or gallium ars.

CGHV96050F1 Datasheet (1.59 MB)

CGHV96050F1 Datasheet Preview — Preview of CGHV96050F1 PDF

Datasheet Details

Part number:

CGHV96050F1

Manufacturer:

CREE

File Size:

1.59 MB

Description:

Input/output matched gan hemt.

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CGHV96050F1 Input Output Matched GaN HEMT CREE

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CGHV96050F1 Features

CGHV96050F1 General Description

Datasheet Details

File Size:

Description:

CGHV96050F1 Distributor