CGH40120F RF Power GaN HEMT

CREE

Description

CGH40120F 120 W, RF Power GaN HEMT Cree’s CGH40120F is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT).The CGH40120F, op.

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Datasheet Specifications

Part number: CGH40120F
Manufacturer: CREE
File Size: 1.06 MB
Datasheet: CGH40120F_CREE.pdf
Description: RF Power GaN HEMT

Features

* Up to 2.5 GHz Operation
* 20 dB Small Signal Gain at 1.0 GHz
* 15 dB Small Signal Gain at 2.0 GHz
* 120 W Typical PSAT
* 70 % Efficiency at PSAT

CGH40120F Distributors

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CGH40120F Power GaN HEMT CREE

CREE CGH40120F-like datasheet