CGH40120F Datasheet - CREE

CGH40120F RF Power GaN HEMT

CGH40120F 120 W, RF Power GaN HEMT Cree’s CGH40120F is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT). The CGH40120F, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave applications. GaN HEMTs offer high efficiency, high gain and wide bandwidth capabilities making the CGH40120F ideal for linear and compressed amplifier circuits. The transistor is available in a flange package. Package Type s: 440193 PN: CGH4.

CGH40120F Features

* Up to 2.5 GHz Operation

* 20 dB Small Signal Gain at 1.0 GHz

* 15 dB Small Signal Gain at 2.0 GHz

* 120 W Typical PSAT

* 70 % Efficiency at PSAT

* 28 V Operation APPLICATIONS

* 2-Way Private Radio

* Broadband Amplifiers

CGH40120F_CREE.pdf

CGH40120F Datasheet Preview — Preview of CGH40120F PDF

Datasheet Details

Part number:

CGH40120F

Manufacturer:

CREE

File Size:

1.06 MB

Description:

Rf power gan hemt.

CGH40120F Distributor

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TAGS

CGH40120F CGH40120F Power GaN HEMT CREE