* Up to 2.5 GHz Operation
* 20 dB Small Signal Gain at 1.0 GHz
* 15 dB Small Signal Gain at 2.0 GHz
* 120 W Typical PSAT
* 70 % Efficiency at PSAT
* 28 V Operation APPLICATIONS
* 2-Way Private Radio
* Broadband Amplifiers
CGH40120F
CREE
1.06 MB
Rf power gan hemt.
CGH40120F
120 W, RF Power GaN HEMT
Cree’s CGH40120F is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT). The CGH40120F, op.
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