CGH40180PP Datasheet, Hemt, MACOM

CGH40180PP Features

• Hemt
• Up to 2.5 GHz Operation
• 20 dB Small Signal Gain at 1.0 GHz
• 15 dB Small Signal Gain at 2.0 GHz
• 220 W typical PSAT
• 70% Efficiency at PSAT

PDF File Details

Part number:

CGH40180PP

Manufacturer:

MACOM

File Size:

1.91MB

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📄 Datasheet

Description:

180w rf power gan hemt. The CGH40180PP is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT). The CGH40180PP, operating from a 28 v

CGH40180PP Application

• Applications GaN HEMTs offer high efficiency, high gain and wide bandwidth capabilities making the CGH40180PP ideal for linear and compressed ampli

TAGS

CGH40180PP

MACOM

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