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CGH40180PP

180W RF Power GaN HEMT

CGH40180PP Features

* Up to 2.5 GHz Operation

* 20 dB Small Signal Gain at 1.0 GHz

* 15 dB Small Signal Gain at 2.0 GHz

* 220 W typical PSAT

* 70% Efficiency at PSAT

* 28 V Operation Applications

* 2-Way Private Radio

* Broadband Amplifiers

* Cell

CGH40180PP General Description

The CGH40180PP is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT). The CGH40180PP, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave applications. GaN HEMTs offer high efficiency, high gain and wide bandwidth cap.

CGH40180PP Datasheet (1.91 MB)

Preview of CGH40180PP PDF

Datasheet Details

Part number:

CGH40180PP

Manufacturer:

MACOM

File Size:

1.91 MB

Description:

180w rf power gan hemt.

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CGH40180PP 180W Power GaN HEMT MACOM

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