CGH40120F - RF Power GaN HEMT
The CGH40120F is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT).
The CGH40120F, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave applications.
GaN HEMTs offer high efficiency, high gain, and wide bandwidth capa
CGH40120F Features
* Up to 2.5 GHz operation
* 20 dB small signal gain at 1.0 GHz
* 15 dB small signal gain at 2.0 GHz
* 120 W typical PSAT
* 70% efficiency at PSAT
* 28 V operation Applications
* 2-Way private radio
* Broadband amplifiers
* Cell
