CGH40120F Datasheet - MACOM

CGH40120F RF Power GaN HEMT

The CGH40120F is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT). The CGH40120F, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave applications. GaN HEMTs offer high efficiency, high gain, and wide bandwidth capa.

CGH40120F Features

* Up to 2.5 GHz operation

* 20 dB small signal gain at 1.0 GHz

* 15 dB small signal gain at 2.0 GHz

* 120 W typical PSAT

* 70% efficiency at PSAT

* 28 V operation Applications

* 2-Way private radio

* Broadband amplifiers

* Cell

CGH40120F-MACOM.pdf

CGH40120F Datasheet Preview — Preview of CGH40120F PDF

Datasheet Details

Part number:

CGH40120F

Manufacturer:

MACOM

File Size:

1.12 MB

Description:

Rf power gan hemt.

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TAGS

CGH40120F CGH40120F Power GaN HEMT MACOM

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