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CGH40120F - RF Power GaN HEMT

MACOM

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Datasheet Details

Part number	CGH40120F
Manufacturer	MACOM
File Size	1.12 MB
Description	RF Power GaN HEMT
Datasheet	CGH40120F-MACOM.pdf

CGH40120F Product details

Description

The CGH40120F is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT).

Features

Up to 2.5 GHz operation.
20 dB small signal gain at 1.0 GHz.
15 dB small signal gain at 2.0 GHz.
120 W typical PSAT.
70% efficiency at PSAT.
28 V operation.

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Published: Dec 29, 2024 |