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CGH40120F RF Power GaN HEMT

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Description

CGH40120F 120 W, RF Power GaN HEMT .
The CGH40120F is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT).

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Datasheet Specifications

Part number
CGH40120F
Manufacturer
MACOM
File Size
1.12 MB
Datasheet
CGH40120F-MACOM.pdf
Description
RF Power GaN HEMT

Features

* Up to 2.5 GHz operation
* 20 dB small signal gain at 1.0 GHz
* 15 dB small signal gain at 2.0 GHz
* 120 W typical PSAT
* 70% efficiency at PSAT

CGH40120F Distributors

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