CGH40025F GaN HEMT

Cree

Description

PRELIMINARY CGH40025F 25 W, RF Power GaN HEMT Cree’s CGH40025 is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT).The CGH.
RES,1/16W,0603,1%,47 OHMS RES,1/16W,0603,1%,100 OHMS CAP, 470PF, 5%,100V, 0603 CAP, 33 UF, 20%, G CASE CAP, 1.

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Datasheet Specifications

Part number: CGH40025F
Manufacturer: Cree
File Size: 1.41 MB
Datasheet: CGH40025F_Cree.pdf
Description: GaN HEMT

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CGH40025F GaN HEMT Cree

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