CGH31240F GaN HEMT

Cree

Description

CGH31240F 240 W, 2700-3100 MHz, 50-ohm Input/Output Matched, GaN HEMT for S-Band Radar Systems Cree’s CGH31240F is a gallium nitride (GaN) high electr.
RES, 511 OHM, +/- 1%, 1/16W, 0603 RES, 5.

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Datasheet Specifications

Part number: CGH31240F
Manufacturer: Cree
File Size: 1.84 MB
Datasheet: CGH31240F-Cree.pdf
Description: GaN HEMT

Features

* 2.7 - 3.1 GHz Operation
* 12 dB Power Gain
* 60 % Power Added Efficiency
* < 0.2 dB Pulsed Amplitude Droop Rev 2.0
* May 2015 Subject to change without notice. www. cree. com/rf 1 Absolute Maximum Ratings (not simultaneous) at 25˚C Case Temperature Pa

Applications

* The transistor is supplied in a ceramic/metal flange package. PackaPgeN:TCypGeH: 3414204200F1 Typical Performance Over 2.7-3.1 GHz (TC = 25˚C) of Demonstration Amplifier Parameter 2.7 GHz 2.8 GHz 2.9 GHz 3.0 GHz Output Power 243 249 249 245 3.1 GHz 243 Gain 11.9 11.9 11.9 11.9 11.9

CGH31240F Distributors

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CGH31240F GaN HEMT Cree

Cree CGH31240F-like datasheet