CGH31240F Datasheet, Hemt, Cree

CGH31240F Features

  • Hemt
  • 2.7 - 3.1 GHz Operation
  • 12 dB Power Gain
  • 60 % Power Added Efficiency
  • < 0.2 dB Pulsed Amplitude Droop Rev 2.0
      – May 2015 Sub

PDF File Details

Part number:

CGH31240F

Manufacturer:

Cree

File Size:

1.84MB

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📄 Datasheet

Description:

Gan hemt. RES, 511 OHM, +/- 1%, 1/16W, 0603 RES, 5.1, OHM, +/- 1%, 1/16W, 0603 CAP, 10.0pF, +/-5%, 250V, 0603, ATC600S CAP, 6.8pF, +/- 0.25 pF,

Datasheet Preview: CGH31240F 📥 Download PDF (1.84MB)
Page 2 of CGH31240F Page 3 of CGH31240F

CGH31240F Application

  • Applications The transistor is supplied in a ceramic/metal flange package. PackaPgeN:TCypGeH: 3414204200F1 Typical Performance Over 2.7-3.1 GHz (

TAGS

CGH31240F
GaN
HEMT
Cree

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Stock and price

MACOM
RF MOSFET HEMT 28V 440201
DigiKey
CGH31240F
37 In Stock
Qty : 1 units
Unit Price : $632.09
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