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CGH31240F

GaN HEMT

CGH31240F Features

* 2.7 - 3.1 GHz Operation

* 12 dB Power Gain

* 60 % Power Added Efficiency

* < 0.2 dB Pulsed Amplitude Droop Rev 2.0

* May 2015 Subject to change without notice. www.cree.com/rf 1 Absolute Maximum Ratings (not simultaneous) at 25˚C Case Temperature Pa

CGH31240F General Description

RES, 511 OHM, +/- 1%, 1/16W, 0603 RES, 5.1, OHM, +/- 1%, 1/16W, 0603 CAP, 10.0pF, +/-5%, 250V, 0603, ATC600S CAP, 6.8pF, +/- 0.25 pF, 250V, 0603, ATC600S CAP, 470pF, +/-5%, 100V, 0603, X7R CAP, 33uF, 20%, G CASE CAP, 33000 pF, 0805, 100V, X7R CAP, 1.0uF, 100V, 10%, X7R, 1210 CAP, 10uF, 16V, TANTALUM.

CGH31240F Datasheet (1.84 MB)

Preview of CGH31240F PDF

Datasheet Details

Part number:

CGH31240F

Manufacturer:

Cree

File Size:

1.84 MB

Description:

Gan hemt.
CGH31240F 240 W, 2700-3100 MHz, 50-ohm Input/Output Matched, GaN HEMT for S-Band Radar Systems Cree’s CGH31240F is a gallium nitride (GaN) high electr.

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TAGS

CGH31240F GaN HEMT Cree

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