CGH31240F Datasheet (Cree)

CGH31240F, GaN HEMT

RES, 511 OHM, +/- 1%, 1/16W, 0603 RES, 5.1, OHM, +/- 1%, 1/16W, 0603 CAP, 10.0pF, +/-5%, 250V, 0603, ATC600S CAP, 6.8pF, +/- 0.25 pF, 250V, 0603, ATC600S CAP, 470pF, +/-5%, 100V, 0603, X7R CAP, 33uF, 20%, G CASE CAP, 33000 pF, 0805, 100V, X7R CAP, 1.0uF, 100V, 10%, X7R, 1210 CAP, 10uF, 16V, TANTALUM

CGH31240F 240 W, 2700-3100 MHz, 50-ohm Input/Output Matched, GaN HEMT for S-Band Radar Systems Cree’s CGH31240F is a gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically with high efficiency, high gain and wide bandwidth capabilities, which makes the CGH31240F ideal for 2.7-3.1GHz S-Band radar amplifier applications.

The transistor is supplied in a ceramic/metal flange package.

PackaPgeN:TCypGeH: 3414204200F1 Typical Performance Over 2.7-3.1 GHz (TC = 25˚C) of D

CGH31240F Features

* 2.7 - 3.1 GHz Operation

* 12 dB Power Gain

* 60 % Power Added Efficiency

* < 0.2 dB Pulsed Amplitude Droop Rev 2.0

* May 2015 Subject to change without notice. www.cree.com/rf 1 Absolute Maximum Ratings (not simultaneous) at 25˚C Case Temperature Pa