CGH35060P1 - GaN HEMT
RES, 1/16W, 0603, 1%, 5.1 OHMS RES, 1/16W, 0603, 1%, 100 OHMS CAP, 470pF, 5%,100V, 0603 CAP, 33 UF, 20%, G CASE CAP, 1.0UF, 100V, 10%, X7R, 1210 CAP 10UF 16V TANTALUM CAP, 7.5pF, +/-0.1pF, 0603, ATC CAP, 0.6pF, +/-0.05pF, 0603, ATC CAP, 1.2pF, +/-0.1pF, 0603, ATC CAP, 4.7pF, +/-0.25pF, 100B, ATC CAP
CGH35060F1 / CGH35060P1 60 W, 3.3-3.6 GHz, 28V, GaN HEMT for WiMAX, Broadband Wireless Access Cree’s CGH35060F is a gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH35060F ideal for 3.3-3.6 GHz WiMAX and BWA linear amplifier applications.
The transistor is supplied in a ceramic/ metal flange and pill package.
Cree GaN-on-SiC HEMTs are highly correctable, enabling even greater e
CGH35060P1 Features
* 3.3 - 3.6 GHz Operation
* 60 W Peak Power Capability
* 12 dB Small Signal Gain
* 8.0 W PAVE at < 2.0 % EVM
* 25 % Drain Efficiency at 8 W PAVE
* WiMAX Fixed Access 802.16-2004 OFDM
* WiMAX Mobile Access 802.16e OFDMA Rev 3.1 - Februar
