CGH35240F
Cree
1.22MB
Gan hemt. RES, 511 OHM, +/- 1%, 1/16W,0603 RES, 5.1,OHM, +/- 1%, 1/16W,0603 CAP, 10.0pF, +/-5%,250V, 0603, CAP, 6.8pF, +/- 0.25 pF,250V, 0603 C
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CGH35240F - GaN HEMT
(Wolfspeed)
CGH35240F
240 W, 3.1-3.5 GHz, 50-ohm Input/Output Matched, GaN HEMT for S-Band Radar Systems
Description
Wolfspeed’s CGH35240F is a gallium nitride (G.
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(Cree)
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(Cree)
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15 W, 3300-3900 MHz, 28V, GaN HEMT for WiMAX
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(Cree)
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(Wolfspeed)
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30 W, 3.3-3.9 GHz, 28V, GaN HEMT for WiMAX
Description
Wolfspeed’s CGH35030F is a gallium nitride (GaN) high electron mobility transistor (H.
CGH35060F1 - GaN HEMT
(Cree)
CGH35060F1 / CGH35060P1
60 W, 3.3-3.6 GHz, 28V, GaN HEMT for WiMAX, Broadband Wireless Access
Cree’s CGH35060F is a gallium nitride (GaN) high electr.
CGH35060F1 - GaN HEMT
(Wolfspeed)
CGH35060F1/P1
60 W, 3.3-3.6 GHz, 28V, GaN HEMT for WiMAX, Broadband Wireless Access
Description
Wolfspeed’s CGH35060F F1/P1 is a gallium nitride (GaN).
CGH35060F2 - GaN HEMT
(Wolfspeed)
CGH35060F2/P2
60 W, 3.1 - 3.5 GHz, 28 V, GaN HEMT
Description
Wolfspeed’s CGH35060F2/P2 is a gallium nitride (GaN) high electron mobility transistor (.
CGH35060P1 - GaN HEMT
(Cree)
CGH35060F1 / CGH35060P1
60 W, 3.3-3.6 GHz, 28V, GaN HEMT for WiMAX, Broadband Wireless Access
Cree’s CGH35060F is a gallium nitride (GaN) high electr.