CGH35240F GaN HEMT

Cree

Description

CGH35240F 240 W, 3100-3500 MHz, 50-ohm Input/Output Matched, GaN HEMT for S-Band Radar Systems Cree’s CGH35240F is a gallium nitride (GaN) high electr.
RES, 511 OHM, +/- 1%, 1/16W,0603 RES, 5.

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Datasheet Specifications

Part number: CGH35240F
Manufacturer: Cree
File Size: 1.22 MB
Datasheet: CGH35240F-Cree.pdf
Description: GaN HEMT

Features

* 3.1 - 3.5 GHz Operation
* 240 W Typical Output Power
* 11.6 dB Power Gain at PIN = 42.0 dBm
* 57 % Typical Power Added Efficiency
* 50 Ohm Internally Matched

Applications

* The transistor is supplied in a ceramic/metal flange package. PackaPgeN:TCypGeH: 3454204200F1 Typical Performance Over 3.1-3.5GHz (TC = 25˚C) of Demonstration Amplifier Parameter 3.1 GHz 3.2 GHz 3.3 GHz 3.4 GHz Output Power 250 240 225 225 3.5 GHz 220 Gain 12.1 11.9 11.6 11.5 11.4

CGH35240F Distributors

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CGH35240F GaN HEMT Cree

Cree CGH35240F-like datasheet