CGH35240F Datasheet (Cree)

CGH35240F, GaN HEMT

RES, 511 OHM, +/- 1%, 1/16W,0603 RES, 5.1,OHM, +/- 1%, 1/16W,0603 CAP, 10.0pF, +/-5%,250V, 0603, CAP, 6.8pF, +/- 0.25 pF,250V, 0603 CAP, 470PF, +/-5%, 100V, 0603, X CAP, 33 UF, 20%, G CASE CAP,33000PF, 0805,100V, X7R CAP, 1.0UF, 100V, 10%, X7R, 1210 CAP 10UF 16V TANTALUM CAP, 10pF, +/- 1%, 250V, 080

CGH35240F 240 W, 3100-3500 MHz, 50-ohm Input/Output Matched, GaN HEMT for S-Band Radar Systems Cree’s CGH35240F is a gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically with high efficiency, high gain and wide bandwidth capabilities, which makes the CGH35240F ideal for 3.1-3.5GHz S-Band radar amplifier applications.

The transistor is supplied in a ceramic/metal flange package.

PackaPgeN:TCypGeH: 3454204200F1 Typical Performance Over 3.1-3.5GHz (TC = 25˚C) of De

CGH35240F Features

* 3.1 - 3.5 GHz Operation

* 240 W Typical Output Power

* 11.6 dB Power Gain at PIN = 42.0 dBm

* 57 % Typical Power Added Efficiency

* 50 Ohm Internally Matched