CGH31240F GaN HEMT

MACOM

Description

CGH31240F 240 W, 2.7-3.1 GHz, 50-ohm Input/Output Matched, GaN HEMT for S-Band Radar Systems .
The CGH31240F is a gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically with high efficiency, high gain and wide bandw.

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Datasheet Specifications

Part number: CGH31240F
Manufacturer: MACOM
File Size: 1.86 MB
Datasheet: CGH31240F-MACOM.pdf
Description: GaN HEMT

Features

* 2.7 - 3.1 GHz Operation
* 12 dB Power Gain
* 60% Power Added Efficiency
* < 0.2 dB Pulsed Amplitude Droop Large Signal Models Available for ADS and MWO 1 MACOM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s)

Applications

* The transistor is supplied in a ceramic/metal flange package. Package Types: 440201 PN: CGH31240F Typical Performance Over 2.7-3.1 GHz (TC = 25ºC) of Demonstration Amplifier Parameter Output Power Gain Power Added Efficiency 2.7 GHz 243 11.9 60 2.8 GHz 249 11.9 61 2.9 GHz 249 11.9 60 3.0 GHz

CGH31240F Distributors

📁 Related Datasheet

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CGH31240F GaN HEMT MACOM

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