CGH31240F Datasheet - MACOM

CGH31240F GaN HEMT

The CGH31240F is a gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically with high efficiency, high gain and wide bandwidth capabilities, which makes the CGH31240F ideal for 2.7-3.1 GHz S-Band radar amplifier applications. The transistor is supplied in a ceramic/metal .

CGH31240F Features

* 2.7 - 3.1 GHz Operation

* 12 dB Power Gain

* 60% Power Added Efficiency

* < 0.2 dB Pulsed Amplitude Droop Large Signal Models Available for ADS and MWO 1 MACOM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s)

CGH31240F-MACOM.pdf