Part number:
CGH31240F
Manufacturer:
MACOM
File Size:
1.86 MB
Description:
Gan hemt.
Datasheet Details
Part number:
CGH31240F
Manufacturer:
MACOM
File Size:
1.86 MB
Description:
Gan hemt.
CGH31240F, GaN HEMT
The CGH31240F is a gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically with high efficiency, high gain and wide bandwidth capabilities, which makes the CGH31240F ideal for 2.7-3.1 GHz S-Band radar amplifier applications.
The transistor is supplied in a ceramic/metal
CGH31240F Features
* 2.7 - 3.1 GHz Operation
* 12 dB Power Gain
* 60% Power Added Efficiency
* < 0.2 dB Pulsed Amplitude Droop Large Signal Models Available for ADS and MWO 1 MACOM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s)
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