CGH31240F - GaN HEMT

MACOM

CGH31240F Datasheet Preview — Preview of CGH31240F PDF

Datasheet Details

Part number	CGH31240F
Manufacturer	MACOM
File Size	1.86 MB
Description	GaN HEMT
Datasheet	CGH31240F-MACOM.pdf

CGH31240F Product details

Description

The CGH31240F is a gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically with high efficiency, high gain and wide bandwidth capabilities, which makes the CGH31240F ideal for 2.7-3.1 GHz S-Band radar amplifier applications.

Features

2.7 - 3.1 GHz Operation.
12 dB Power Gain.
60% Power Added Efficiency.
< 0.2 dB Pulsed Amplitude Droop Large Signal Models Available for ADS and MWO 1 MACOM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www. macom. com for additional data sheets and product information. For further information and support please visit: Rev. 2.2, 2022-11-11 http.

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Published: May 13, 2024 |