CGH31240F Datasheet, Hemt, MACOM

CGH31240F Features

• Hemt
• 2.7 - 3.1 GHz Operation
• 12 dB Power Gain
• 60% Power Added Efficiency
• < 0.2 dB Pulsed Amplitude Droop Large Signal Models Available for ADS and MW

PDF File Details

Part number:

CGH31240F

Manufacturer:

MACOM

File Size:

1.86MB

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📄 Datasheet

Description:

Gan hemt. The CGH31240F is a gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically with high efficiency, high ga

CGH31240F Application

• Applications The transistor is supplied in a ceramic/metal flange package. Package Types: 440201 PN: CGH31240F Typical Performance Over 2.7-3.1 G

TAGS

CGH31240F

MACOM

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