CGH31240F

GaN HEMT

MACOM

CGH31240F Features

* 2.7 - 3.1 GHz Operation

* 12 dB Power Gain

* 60% Power Added Efficiency

* < 0.2 dB Pulsed Amplitude Droop Large Signal Models Available for ADS and MWO 1 MACOM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s)

CGH31240F General Description

The CGH31240F is a gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically with high efficiency, high gain and wide bandwidth capabilities, which makes the CGH31240F ideal for 2.7-3.1 GHz S-Band radar amplifier applications. The transistor is supplied in a ceramic/metal .

CGH31240F Datasheet (1.86 MB)

CGH31240F Datasheet Preview — Preview of CGH31240F PDF

Datasheet Details

Part number:

CGH31240F

Manufacturer:

MACOM

File Size:

1.86 MB

Description:

Gan hemt.

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CGH31240F GaN HEMT MACOM

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CGH31240F Features

CGH31240F General Description

Datasheet Details

File Size:

Description:

CGH31240F Distributor