CGH40006P RF Power GaN HEMT

MACOM

Description

CGH40006P 6 W, RF Power GaN HEMT .
The CGH40006P is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT).

Datasheet Specifications

Features

* Up to 6 GHz Operation
* 13 dB Small Signal Gain at 2.0 GHz
* 11 dB Small Signal Gain at 6.0 GHz
* 8 W typical at PIN = 32 dBm

CGH40006P Distributors

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