CGH40006P Datasheet - MACOM

CGH40006P RF Power GaN HEMT

The CGH40006P is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT). The CGH40006P, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave applications. GaN HEMTs offer high efficiency, high gain and wide bandwidth capab.

CGH40006P Features

* Up to 6 GHz Operation

* 13 dB Small Signal Gain at 2.0 GHz

* 11 dB Small Signal Gain at 6.0 GHz

* 8 W typical at PIN = 32 dBm

* 28 V Operation Applications

* 2-Way Private Radio

* Broadband Amplifiers

* Cellular Infrastructure

CGH40006P Datasheet (1.53 MB)

CGH40006P Datasheet Preview — Preview of CGH40006P PDF

Datasheet Details

Part number:

CGH40006P

Manufacturer:

MACOM

File Size:

1.53 MB

Description:

Rf power gan hemt.

📁 Related Datasheet

CGH40006P RF Power GaN HEMT (Cree)

CGH40006P RF Power GaN HEMT (Wolfspeed)

CGH40006S RF Power GaN HEMT (MACOM)

CGH40006S RF Power GaN HEMT (Cree)

CGH40006S RF Power GaN HEMT (Wolfspeed)

CGH40010 RF Power GaN HEMT (MACOM)

CGH40010 RF Power GaN HEMT (Cree)

CGH40010 RF Power GaN HEMT (Wolfspeed)

TAGS

CGH40006P Power GaN HEMT MACOM

CGH40006P Distributor