Part number:
CGH40006P
Manufacturer:
MACOM
File Size:
1.53 MB
Description:
Rf power gan hemt.
The CGH40006P is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT).
The CGH40006P, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave applications.
GaN HEMTs offer high efficiency, high gain and wide bandwidth capab
CGH40006P Features
* Up to 6 GHz Operation
* 13 dB Small Signal Gain at 2.0 GHz
* 11 dB Small Signal Gain at 6.0 GHz
* 8 W typical at PIN = 32 dBm
* 28 V Operation Applications
* 2-Way Private Radio
* Broadband Amplifiers
* Cellular Infrastructure
Datasheet Details
CGH40006P
MACOM
1.53 MB
Rf power gan hemt.
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