Datasheet Details
- Part number
- CGH40006P
- Manufacturer
- MACOM
- File Size
- 1.53 MB
- Datasheet
- CGH40006P-MACOM.pdf
- Description
- RF Power GaN HEMT
CGH40006P Description
CGH40006P 6 W, RF Power GaN HEMT .
The CGH40006P is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT).
CGH40006P Features
* Up to 6 GHz Operation
* 13 dB Small Signal Gain at 2.0 GHz
* 11 dB Small Signal Gain at 6.0 GHz
* 8 W typical at PIN = 32 dBm
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