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CGH40006P - RF Power GaN HEMT

CGH40006P Description

CGH40006P 6 W, RF Power GaN HEMT .
The CGH40006P is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT).

CGH40006P Features

* Up to 6 GHz Operation
* 13 dB Small Signal Gain at 2.0 GHz
* 11 dB Small Signal Gain at 6.0 GHz
* 8 W typical at PIN = 32 dBm

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Datasheet Details

Part number
CGH40006P
Manufacturer
MACOM
File Size
1.53 MB
Datasheet
CGH40006P-MACOM.pdf
Description
RF Power GaN HEMT

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