CGH40006P Datasheet - MACOM

CGH40006P, RF Power GaN HEMT

CGH40006P 6 W, RF Power GaN HEMT .
The CGH40006P is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT).

Datasheet Details

Part number:

CGH40006P

Manufacturer:

MACOM

File Size:

1.53 MB

Description:

RF Power GaN HEMT

Features

* Up to 6 GHz Operation
* 13 dB Small Signal Gain at 2.0 GHz
* 11 dB Small Signal Gain at 6.0 GHz
* 8 W typical at PIN = 32 dBm

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