CGH40006S Datasheet - MACOM

CGH40006S - RF Power GaN HEMT

The CGH40006S is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT).

The CGH40006S, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave applications.

GaN HEMTs offer high efficiency, high gain and wide bandwidth capab

CGH40006S Features

* Up to 6 GHz Operation

* 13 dB Small Signal Gain at 2.0 GHz

* 11 dB Small Signal Gain at 6.0 GHz

* 8 W typical at PIN = 32 dBm

* 65% Efficiency at PIN = 32 dBm

* 28 V Operation

* 3mm x 3mm Package Applications

* 2-Way Private Radio

Datasheet Details

CGH40006S

MACOM

1.15 MB

Rf power gan hemt.

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