CGH40006S RF Power GaN HEMT

MACOM

Description

CGH40006S 6 W, RF Power GaN HEMT, Plastic .
The CGH40006S is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT).

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Datasheet Specifications

Part number: CGH40006S
Manufacturer: MACOM
File Size: 1.15 MB
Datasheet: CGH40006S-MACOM.pdf
Description: RF Power GaN HEMT

Features

* Up to 6 GHz Operation
* 13 dB Small Signal Gain at 2.0 GHz
* 11 dB Small Signal Gain at 6.0 GHz
* 8 W typical at PIN = 32 dBm
* 65% Efficiency at PIN = 32 dBm
* 28 V Operation

CGH40006S Distributors

📁 Related Datasheet

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CGH40006S Power GaN HEMT MACOM

MACOM CGH40006S-like datasheet