CGH40006S Datasheet - MACOM

CGH40006S, RF Power GaN HEMT

CGH40006S 6 W, RF Power GaN HEMT, Plastic .
The CGH40006S is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT).

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CGH40006S-MACOM.pdf

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Datasheet Details

Part number:

CGH40006S

Manufacturer:

MACOM

File Size:

1.15 MB

Description:

RF Power GaN HEMT

Features

* Up to 6 GHz Operation
* 13 dB Small Signal Gain at 2.0 GHz
* 11 dB Small Signal Gain at 6.0 GHz
* 8 W typical at PIN = 32 dBm
* 65% Efficiency at PIN = 32 dBm
* 28 V Operation

CGH40006S Distributors

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CGH40006S Power GaN HEMT MACOM

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