CGH40006S Datasheet, Hemt, MACOM

CGH40006S Features

• Hemt
• Up to 6 GHz Operation
• 13 dB Small Signal Gain at 2.0 GHz
• 11 dB Small Signal Gain at 6.0 GHz
• 8 W typical at PIN = 32 dBm
• 65% Efficiency

PDF File Details

Part number:

CGH40006S

Manufacturer:

MACOM

File Size:

1.15MB

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📄 Datasheet

Description:

Rf power gan hemt. The CGH40006S is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT). The CGH40006S, operating from a 28 vol

CGH40006S Application

• Applications GaN HEMTs offer high efficiency, high gain and wide bandwidth capabilities making the CGH40006S ideal for linear and compressed amplif

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CGH40006S

MACOM

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