Datasheet Details
- Part number
- CGH40006S
- Manufacturer
- MACOM
- File Size
- 1.15 MB
- Datasheet
- CGH40006S-MACOM.pdf
- Description
- RF Power GaN HEMT
CGH40006S Description
CGH40006S 6 W, RF Power GaN HEMT, Plastic .
The CGH40006S is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT).
CGH40006S Features
* Up to 6 GHz Operation
* 13 dB Small Signal Gain at 2.0 GHz
* 11 dB Small Signal Gain at 6.0 GHz
* 8 W typical at PIN = 32 dBm
* 65% Efficiency at PIN = 32 dBm
* 28 V Operation
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