CGH40010 RF Power GaN HEMT

MACOM

Description

CGH40010 10 W, DC - 6 GHz, RF Power GaN HEMT .
The CGH40010 is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT).

Datasheet Specifications

Features

* Up to 6 GHz Operation
* 16 dB Small Signal Gain at 2.0 GHz
* 14 dB Small Signal Gain at 4.0 GHz
* 13 W typical PSAT
* 65 % Efficiency at PSAT

CGH40010 Distributors

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