CGH40010 Datasheet, Hemt, MACOM

CGH40010 Features

• Hemt
• Up to 6 GHz Operation
• 16 dB Small Signal Gain at 2.0 GHz
• 14 dB Small Signal Gain at 4.0 GHz
• 13 W typical PSAT
• 65 % Efficiency at PSAT <

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Part number:

CGH40010

Manufacturer:

MACOM

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826.48kb

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📄 Datasheet

Description:

Rf power gan hemt. The CGH40010 is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT). The CGH40010, operating from a 28 volt

CGH40010 Application

• Applications GaN HEMTs offer high efficiency, high gain and wide bandwidth capabilities making the CGH40010 ideal for linear and compressed amplifi

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CGH40010

MACOM

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