CGH40010 Datasheet (MACOM) - RF Power GaN HEMT

CGH40010, RF Power GaN HEMT

The CGH40010 is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT).

The CGH40010, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave applications.

GaN HEMTs offer high efficiency, high gain and wide bandwidth capabil

CGH40010 Features

* Up to 6 GHz Operation

* 16 dB Small Signal Gain at 2.0 GHz

* 14 dB Small Signal Gain at 4.0 GHz

* 13 W typical PSAT

* 65 % Efficiency at PSAT

* 28 V Operation Applications

* 2-Way Private Radio

* Broadband Amplifiers

* Cellul