CGH35015 Datasheet - Cree

CGH35015, GaN HEMT

CGH35015 15 W, 3300-3900 MHz, 28V, GaN HEMT for WiMAX Cree’s CGH35015 is a gallium nitride (GaN) high electron mobility transistor designed specifica.
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CGH35015-Cree.pdf

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Datasheet Details

Part number:

CGH35015

Manufacturer:

Cree

File Size:

788.15 KB

Description:

GaN HEMT

Features

* 3.3 - 3.9 GHz Operation
* 15 W Peak Power Capability
* 12 dB Small Signal Gain
* 2.0 W PAVE at < 2.0 % EVM
* 26 % Efficiency at 2 W Average Power
* WiMAX Fixed Access 802.16-2004 OFDM
* WiMAX Mobile Access 802.16e OFDMA Rev 4.0

Applications

* GaN HEMTs offer high efficiency, high gain and wide bandwidth capabilities, which makes the CGH35015 ideal for 3.3-3.9GHz WiMAX and BWA amplifier applications. The transistor is available in both screw-down, flange and solder-down, pill packages. PPacNk:aCgGeHT3y5p0e1: 454F0a1n6d6CaGnHd3454001159P

CGH35015 Distributors

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