Datasheet Details
- Part number
- CGH35015
- Manufacturer
- Cree
- File Size
- 788.15 KB
- Datasheet
- CGH35015-Cree.pdf
- Description
- GaN HEMT
CGH35015 Description
CGH35015 15 W, 3300-3900 MHz, 28V, GaN HEMT for WiMAX Cree’s CGH35015 is a gallium nitride (GaN) high electron mobility transistor designed specifica.
CAP, 0.
CGH35015 Features
* 3.3 - 3.9 GHz Operation
* 15 W Peak Power Capability
* 12 dB Small Signal Gain
* 2.0 W PAVE at < 2.0 % EVM
* 26 % Efficiency at 2 W Average Power
* WiMAX Fixed Access 802.16-2004 OFDM
* WiMAX Mobile Access 802.16e OFDMA
Rev 4.0
CGH35015 Applications
* GaN HEMTs offer high efficiency, high gain and wide bandwidth capabilities, which makes the CGH35015 ideal for 3.3-3.9GHz WiMAX and BWA amplifier applications. The transistor is available in both screw-down, flange and solder-down, pill packages. PPacNk:aCgGeHT3y5p0e1: 454F0a1n6d6CaGnHd3454001159P
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