CGH35015 - GaN HEMT
CAP, 0.8pF, +/-0.1 pF, 0603, ATC 600S CAP, 2.4pF,+/-0.1pF, 0603, ATC 600S CAP, 10.0pF, +/-5%, 0603, ATC 600S CAP, 39 PF±5%, 0603, ATC 600S CAP, 100 PF±5%, 0603, ATC 600S CAP, 470 PF ±10%,100 V, 0603 CAP, 33000PF, 100V, 0805, X7R CAP, 10UF, 16V, SMT, TANTALUM (240096) CAP, 1.0UF ±10%, 100V, 1210, X7R
CGH35015 15 W, 3300-3900 MHz, 28V, GaN HEMT for WiMAX Cree’s CGH35015 is a gallium nitride (GaN) high electron mobility transistor designed specifically for 802.16-2004 WiMAX Fixed Access applications.
GaN HEMTs offer high efficiency, high gain and wide bandwidth capabilities, which makes the CGH35015 ideal for 3.3-3.9GHz WiMAX and BWA amplifier applications.
The transistor is available in both screw-down, flange and solder-down, pill packages.
PPacNk:aCgGeHT3y5p0e1: 454F0a1n6d6CaGnHd345400115
CGH35015 Features
* 3.3 - 3.9 GHz Operation
* 15 W Peak Power Capability
* 12 dB Small Signal Gain
* 2.0 W PAVE at < 2.0 % EVM
* 26 % Efficiency at 2 W Average Power
* WiMAX Fixed Access 802.16-2004 OFDM
* WiMAX Mobile Access 802.16e OFDMA Rev 4.0
