CGH35015 Datasheet - Cree

CGH35015 GaN HEMT

CAP, 0.8pF, +/-0.1 pF, 0603, ATC 600S CAP, 2.4pF,+/-0.1pF, 0603, ATC 600S CAP, 10.0pF, +/-5%, 0603, ATC 600S CAP, 39 PF±5%, 0603, ATC 600S CAP, 100 PF±5%, 0603, ATC 600S CAP, 470 PF ±10%,100 V, 0603 CAP, 33000PF, 100V, 0805, X7R CAP, 10UF, 16V, SMT, TANTALUM (240096) CAP, 1.0UF ±10%, 100V, 1210, X7R.

CGH35015 15 W, 3300-3900 MHz, 28V, GaN HEMT for WiMAX Cree’s CGH35015 is a gallium nitride (GaN) high electron mobility transistor designed specifically for 802.16-2004 WiMAX Fixed Access applications. GaN HEMTs offer high efficiency, high gain and wide bandwidth capabilities, which makes the CGH35015 ideal for 3.3-3.9GHz WiMAX and BWA amplifier applications. The transistor is available in both screw-down, flange and solder-down, pill packages. PPacNk:aCgGeHT3y5p0e1: 454F0a1n6d6CaGnHd345400115.

CGH35015 Features

* 3.3 - 3.9 GHz Operation

* 15 W Peak Power Capability

* 12 dB Small Signal Gain

* 2.0 W PAVE at < 2.0 % EVM

* 26 % Efficiency at 2 W Average Power

* WiMAX Fixed Access 802.16-2004 OFDM

* WiMAX Mobile Access 802.16e OFDMA Rev 4.0

CGH35015-Cree.pdf

CGH35015 Datasheet Preview — Preview of CGH35015 PDF

Datasheet Details

Part number:

CGH35015

Manufacturer:

Cree

File Size:

788.15 KB

Description:

Gan hemt.

CGH35015 Distributor

📁 Related Datasheet

CGH35015 GaN HEMT (Wolfspeed)

CGH35015F GaN HEMT (Cree)

CGH35030F GaN HEMT (Cree)

CGH35030F GaN HEMT (Wolfspeed)

CGH35060F1 GaN HEMT (Cree)

CGH35060F1 GaN HEMT (Wolfspeed)

CGH35060F2 GaN HEMT (Wolfspeed)

CGH35060P1 GaN HEMT (Cree)

TAGS

CGH35015 CGH35015 GaN HEMT Cree