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CGH35060P2, CGH35060F2 Datasheet - Wolfspeed

CGH35060P2 GaN HEMT

Wolfspeed’s CGH35060F2/P2 is a gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH35060F2/P2 ideal for 3.1 - 3.5 GHz S-band pulsed amplifier applications. The transistor is supplied i.

CGH35060P2 Features

* 3.1 - 3.5 GHz Operation

* 60 W Peak Power Capability

* 12 dB Small Signal Gain

* 60% Drain Efficiency Large Signal Models Available for ADS and MWO Rev. 4.4, 2022-10-28 4600 Silicon Drive | Durham, NC 27703 | Tel: +1.919.313.5300 © 2022 Wolfspeed, Inc. All right

CGH35060F2-Wolfspeed.pdf

This datasheet PDF includes multiple part numbers: CGH35060P2, CGH35060F2. Please refer to the document for exact specifications by model.
CGH35060P2 Datasheet Preview Page 2 CGH35060P2 Datasheet Preview Page 3

Datasheet Details

Part number:

CGH35060P2, CGH35060F2

Manufacturer:

Wolfspeed

File Size:

1.36 MB

Description:

Gan hemt.

Note:

This datasheet PDF includes multiple part numbers: CGH35060P2, CGH35060F2.
Please refer to the document for exact specifications by model.

CGH35060P2 Distributor

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TAGS

CGH35060P2 CGH35060F2 GaN HEMT Wolfspeed