CGH35060F2 GaN HEMT

Wolfspeed

Description

CGH35060F2/P2 60 W, 3.1 - 3.5 GHz, 28 V, GaN HEMT .
Wolfspeed’s CGH35060F2/P2 is a gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and.

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CGH35060F2 Datasheet Preview — Preview of CGH35060F2 PDF

Datasheet Specifications

Part number: CGH35060F2
Manufacturer: Wolfspeed
File Size: 1.36 MB
Datasheet: CGH35060F2-Wolfspeed.pdf
Description: GaN HEMT

Features

* 3.1 - 3.5 GHz Operation
* 60 W Peak Power Capability
* 12 dB Small Signal Gain
* 60% Drain Efficiency Large Signal Models Available for ADS and MWO Rev. 4.4, 2022-10-28 4600 Silicon Drive | Durham, NC 27703 | Tel: +1.919.313.5300 © 2022 Wolfspeed, Inc. All right

Applications

* The transistor is supplied in a ceramic/metal flange and pill package. Package Types: 440193 & 440206 PNs: CGH35060F2 & CGH35060P2 Typical Performance Over 3.1-3.5 GHz (TC = 25ºC) of Demonstration Amplifier Parameter Small Signal Gain POUT @ PIN = 36.5 dBm Gain @ PIN = 36.5 dBm Drain Efficiency

CGH35060F2 Distributors

📁 Related Datasheet

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CGH35060F2 GaN HEMT Wolfspeed

Wolfspeed CGH35060F2-like datasheet