CGH35060F2 - GaN HEMT
Wolfspeed’s CGH35060F2/P2 is a gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH35060F2/P2 ideal for 3.1 - 3.5 GHz S-band pulsed amplifier applications.
The transistor is supplied i
CGH35060F2 Features
* 3.1 - 3.5 GHz Operation
* 60 W Peak Power Capability
* 12 dB Small Signal Gain
* 60% Drain Efficiency Large Signal Models Available for ADS and MWO Rev. 4.4, 2022-10-28 4600 Silicon Drive | Durham, NC 27703 | Tel: +1.919.313.5300 © 2022 Wolfspeed, Inc. All right
