CGH35015F - GaN HEMT
CAP, 0.7pF, +/-0.1 pF, 0603, ATC 600S CAP, 0.8pF, +/-0.1 pF, 0603, ATC 600S CAP, 2.4pF,+/-0.1pF, 0603, ATC 600S CAP, 10.0pF, +/-5%, 0603, ATC 600S CAP, 39 PF±5%, 0603, ATC 600S CAP, 100 PF±5%, 0603, ATC 600S CAP, 470 PF ±10%,100 V, 0603 CAP, 33000PF, 100V, 0805, X7R CAP, 10UF, 16V, SMT, TANTALUM (24
PRELIMINARY CGH35015F 15 W, 3300-3900 MHz, 28V, GaN HEMT for WiMAX Cree’s CGH35015F is a gallium nitride (GaN) high electron mobility transistor designed specifically for 802.16-2004 WiMAX Fixed Access applications.
GaN HEMTs offer high efficiency, high gain and wide bandwidth capabilities, which makes the CGH35015F ideal for 3.3-3.9GHz WiMAX and BWA amplifier applications.
The transistor is available in a www.DataSheet4U.com flange package.
Package Type : 440166 PN: CGH3501 5F Typical Perfor
CGH35015F Features
* ch 2007 Rev 1.6
* Mar 3.3 - 3.9 GHz Operation >11 dB Small Signal Gain >2.0 W POUT at 2.0 % EVM 24 % Efficiency at 2.0 W POUT 15 W Typical P3dB WiMAX Fixed Access 802.16-2004 OFDM
* Subject to change without notice. www.cree.com/wi
