Datasheet Details
- Part number
- CGH35015F
- Manufacturer
- Cree
- File Size
- 886.60 KB
- Datasheet
- CGH35015F_Cree.pdf
- Description
- GaN HEMT
CGH35015F Description
PRELIMINARY CGH35015F 15 W, 3300-3900 MHz, 28V, GaN HEMT for WiMAX Cree’s CGH35015F is a gallium nitride (GaN) high electron mobility transistor desi.
CAP, 0.
CGH35015F Features
* ch 2007 Rev 1.6
* Mar
3.3 - 3.9 GHz Operation >11 dB Small Signal Gain >2.0 W POUT at 2.0 % EVM 24 % Efficiency at 2.0 W POUT 15 W Typical P3dB WiMAX Fixed Access 802.16-2004 OFDM
* Subject to change without notice. www. cree. com/wi
CGH35015F Applications
* GaN HEMTs offer high efficiency, high gain and wide bandwidth capabilities, which makes the CGH35015F ideal for 3.3-3.9GHz WiMAX and BWA amplifier applications. The transistor is available in a www. DataSheet4U. com flange package. Package Type : 440166 PN: CGH3501 5F
Typical Performance 3.4-3.9GHz
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