CGH35015F

GaN HEMT

Cree

CGH35015F Features

* ch 2007 Rev 1.6

* Mar 3.3 - 3.9 GHz Operation >11 dB Small Signal Gain >2.0 W POUT at 2.0 % EVM 24 % Efficiency at 2.0 W POUT 15 W Typical P3dB WiMAX Fixed Access 802.16-2004 OFDM

* Subject to change without notice. www.cree.com/wi

CGH35015F General Description

CAP, 0.7pF, +/-0.1 pF, 0603, ATC 600S CAP, 0.8pF, +/-0.1 pF, 0603, ATC 600S CAP, 2.4pF,+/-0.1pF, 0603, ATC 600S CAP, 10.0pF, +/-5%, 0603, ATC 600S CAP, 39 PF±5%, 0603, ATC 600S CAP, 100 PF±5%, 0603, ATC 600S CAP, 470 PF ±10%,100 V, 0603 CAP, 33000PF, 100V, 0805, X7R CAP, 10UF, 16V, SMT, TANTALUM (24.

CGH35015F Datasheet (886.60 KB)

CGH35015F Datasheet Preview — Preview of CGH35015F PDF

Datasheet Details

Part number:

CGH35015F

Manufacturer:

Cree

File Size:

886.60 KB

Description:

Gan hemt.
PRELIMINARY CGH35015F 15 W, 3300-3900 MHz, 28V, GaN HEMT for WiMAX Cree’s CGH35015F is a gallium nitride (GaN) high electron mobility transistor desi.

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CGH35015F GaN HEMT Cree

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CGH35015F Features

CGH35015F General Description

Datasheet Details

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CGH35015F Distributor