CGH35015F Datasheet - Cree

CGH35015F, GaN HEMT

PRELIMINARY CGH35015F 15 W, 3300-3900 MHz, 28V, GaN HEMT for WiMAX Cree’s CGH35015F is a gallium nitride (GaN) high electron mobility transistor desi.
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Datasheet Details

Part number:

CGH35015F

Manufacturer:

Cree

File Size:

886.60 KB

Description:

GaN HEMT

Features

* ch 2007 Rev 1.6
* Mar 3.3 - 3.9 GHz Operation >11 dB Small Signal Gain >2.0 W POUT at 2.0 % EVM 24 % Efficiency at 2.0 W POUT 15 W Typical P3dB WiMAX Fixed Access 802.16-2004 OFDM
* Subject to change without notice. www. cree. com/wi

Applications

* GaN HEMTs offer high efficiency, high gain and wide bandwidth capabilities, which makes the CGH35015F ideal for 3.3-3.9GHz WiMAX and BWA amplifier applications. The transistor is available in a www. DataSheet4U. com flange package. Package Type : 440166 PN: CGH3501 5F Typical Performance 3.4-3.9GHz

CGH35015F Distributors

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CGH35015F GaN HEMT Cree

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