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CGH35030F

GaN HEMT

CGH35030F Features

* 2007 Rev 1.4

* May 3.3 - 3.9 GHz Operation >11 dB Small Signal Gain 2.0 % EVM at 4 W POUT 23 % Efficiency at 4 W POUT 3.7˚C/W Typical thermal resistance under 4.0 W PAVE OFDM WiMAX Fixed Access 802.16-2004 OFDM

* Subject to change

CGH35030F General Description

RES,1/16W,0603,1%,100 OHMS RES,1/16W,0603,1%,47 OHMS CAP, 470PF, 10%,100V, 0603 CAP, 33 UF, 20%, G CASE CAP, 1.0UF, 100V, 10%, X7R, 1210 CAP 10UF 16V TANTALUM CAP, 100.0pF, +/-5%, 0603 CAP, 0.8pF, +/-0.05pF, 0603 CAP, 0.7pF, +/-0.05pF, 0603 CAP, 10.0pF,+/-5%, 0603 CAP, 39pF, +/-5%, 0603 CAP,33000PF,.

CGH35030F Datasheet (932.18 KB)

Preview of CGH35030F PDF

Datasheet Details

Part number:

CGH35030F

Manufacturer:

Cree

File Size:

932.18 KB

Description:

Gan hemt.
PRELIMINARY CGH35030F 30 W, 3300-3900 MHz, 28V, GaN HEMT for WiMAX Cree’s CGH35030F is a gallium nitride (GaN) high electron mobility transistor (HEM.

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CGH35030F GaN HEMT Cree

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CGH35030F Distributor