CGH35030F Datasheet - Cree

CGH35030F, GaN HEMT

PRELIMINARY CGH35030F 30 W, 3300-3900 MHz, 28V, GaN HEMT for WiMAX Cree’s CGH35030F is a gallium nitride (GaN) high electron mobility transistor (HEM.
RES,1/16W,0603,1%,100 OHMS RES,1/16W,0603,1%,47 OHMS CAP, 470PF, 10%,100V, 0603 CAP, 33 UF, 20%, G CASE CAP, 1.

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CGH35030F_Cree.pdf

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Datasheet Details

Part number:

CGH35030F

Manufacturer:

Cree

File Size:

932.18 KB

Description:

GaN HEMT

Features

* 2007 Rev 1.4
* May 3.3 - 3.9 GHz Operation >11 dB Small Signal Gain 2.0 % EVM at 4 W POUT 23 % Efficiency at 4 W POUT 3.7˚C/W Typical thermal resistance under 4.0 W PAVE OFDM WiMAX Fixed Access 802.16-2004 OFDM
* Subject to change

Applications

* The transistor is supplied in a ceramic/metal flange package. www. DataSheet4U. com Package Type : 440166 PN: CGH3503 0F Typical Performance Over 3.3-3.7GHz Parameter Small Signal Gain EVM @ 36 dBm Drain Efficiency @ 36 dBm Input Return Loss 3.3 GHz 10.9 1.9 20.8 11.4 11.1 1.9 20.8 8.2 (TC = 25˚C)

CGH35030F Distributors

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CGH35030F GaN HEMT Cree

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