CGH35030F Datasheet - Cree

CGH35030F GaN HEMT

RES,1/16W,0603,1%,100 OHMS RES,1/16W,0603,1%,47 OHMS CAP, 470PF, 10%,100V, 0603 CAP, 33 UF, 20%, G CASE CAP, 1.0UF, 100V, 10%, X7R, 1210 CAP 10UF 16V TANTALUM CAP, 100.0pF, +/-5%, 0603 CAP, 0.8pF, +/-0.05pF, 0603 CAP, 0.7pF, +/-0.05pF, 0603 CAP, 10.0pF,+/-5%, 0603 CAP, 39pF, +/-5%, 0603 CAP,33000PF,.

PRELIMINARY CGH35030F 30 W, 3300-3900 MHz, 28V, GaN HEMT for WiMAX Cree’s CGH35030F is a gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH35030F ideal for 3.33.9GHz WiMAX and BWA amplifier applications. The transistor is supplied in a ceramic/metal flange package. www.DataSheet4U.com Package Type : 440166 PN: CGH3503 0F Typical Performance Over 3.3-3.7GHz Parameter Small Sign.

CGH35030F Features

* 2007 Rev 1.4

* May 3.3 - 3.9 GHz Operation >11 dB Small Signal Gain 2.0 % EVM at 4 W POUT 23 % Efficiency at 4 W POUT 3.7˚C/W Typical thermal resistance under 4.0 W PAVE OFDM WiMAX Fixed Access 802.16-2004 OFDM

* Subject to change

CGH35030F_Cree.pdf