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CGH40045

GaN HEMT

CGH40045 Features

* Up to 4 GHz Operation >16 dB Small Signal Gain at 2.0 GHz 12 dB Small Signal Gain at 4.0 GHz 55 W Typical P3dB 55 % Efficiency at P3dB 28 V Operation APPLICATIONS

* 2-Way Private Radio Broadb

CGH40045 General Description

CAP, 6.8pF, ± -0.25 pF, 0603 CAP, 1.8pF, ± -0.1 pF, 0603 CAP, 5.6pF, ± -0.1pF, 0603 CAP, 10000pF, 100V, TEMP STBL, 0805 CAP, 0.1uF ±10%, 100 V, 1206, X7R CAP, 100pF±5%, 0603 CAP, 10UF, 16V, SMT, TANTALUM CAP, 0.2pF, ± -0.05pF, 0603 CAP, 1.0UF ±10%, 100V, 1210, X7R CAP, 33UF, 20%, 100V, ELECT, FK, SM.

CGH40045 Datasheet (1.39 MB)

Preview of CGH40045 PDF

Datasheet Details

Part number:

CGH40045

Manufacturer:

Cree

File Size:

1.39 MB

Description:

Gan hemt.
PRELIMINARY CGH40045 45 W, RF Power GaN HEMT Cree’s CGH40045 is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT). The CGH4.

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CGH40045 GaN HEMT Cree

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