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CGHV1F025S

GaN HEMT

CGHV1F025S Features

* Up to 15 GHz Operation

* 25 W Typical Output Power

* 11 dB Gain at 9.4 GHz

* Application circuit for 8.9 - 9.6 GHz Large Signal Models Available for ADS and MWO Rev. 4.7, 2022-12-2 4600 Silicon Drive | Durham, NC 27703 | Tel: +1.919.313.5300 © 2022 Wolfspeed, In

CGHV1F025S General Description

Wolfspeed’s CGHV1F025S is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities. The device can be deployed for L-, S-, C-, X- and Ku-Band amplifier applications. The datasheet specifications .

CGHV1F025S Datasheet (2.27 MB)

Preview of CGHV1F025S PDF

Datasheet Details

Part number:

CGHV1F025S

Manufacturer:

Wolfspeed

File Size:

2.27 MB

Description:

Gan hemt.

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CGHV1F025S GaN HEMT Wolfspeed

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