CGH35060F1 Datasheet, Hemt, Wolfspeed

CGH35060F1 Features

• Hemt
• 3.3 - 3.6 GHz Operation
• 60 W Peak Power Capability
• 12 dB Small Signal Gain
• 8.0 W PAVE at < 2.0% EVM
• 25% Drain Efficiency at 8 W PAVE <

PDF File Details

Part number:

CGH35060F1

Manufacturer:

Wolfspeed

File Size:

1.43MB

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📄 Datasheet

Description:

Gan hemt. Wolfspeed’s CGH35060F F1/P1 is a gallium nitride (GaN) high electron mobility transistor(HEMT) designed specifically for high efficie

CGH35060F1 Application

• Applications The transistor is supplied in a ceramic/metal flange and pill package. Wolfspeed GaN-on-Silicon Carbide instead HEMTs are highly corre

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CGH35060F1

Wolfspeed

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