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CGH35060F1 GaN HEMT

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Description

CGH35060F1/P1 60 W, 3.3-3.6 GHz, 28V, GaN HEMT for WiMAX, Broadband Wireless Access .
Wolfspeed’s CGH35060F F1/P1 is a gallium nitride (GaN) high electron mobility transistor(HEMT) designed specifically for high efficiency, high gain an.

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Datasheet Specifications

Part number
CGH35060F1
Manufacturer
Wolfspeed
File Size
1.43 MB
Datasheet
CGH35060F1-Wolfspeed.pdf
Description
GaN HEMT

Features

* 3.3 - 3.6 GHz Operation
* 60 W Peak Power Capability
* 12 dB Small Signal Gain
* 8.0 W PAVE at < 2.0% EVM
* 25% Drain Efficiency at 8 W PAVE
* WiMAX Fixed Access 802.16-2004 OFDM
* WiMAX Mobile Access 802.16e OFDMA Large Signal Models Avail

Applications

* The transistor is supplied in a ceramic/metal flange and pill package. Wolfspeed GaN-on-Silicon Carbide instead HEMTs are highly correctable, enabling even greater efficiency when used with digital pre-distortion (DPD). Package Types: 440193 and 440196 PNs: CGH35060F1 and CGH35060P1 Typical Perfo

CGH35060F1 Distributors

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