CGH35060P1 Datasheet, Hemt, Wolfspeed

CGH35060P1 Features

• Hemt
• 3.3 - 3.6 GHz Operation
• 60 W Peak Power Capability
• 12 dB Small Signal Gain
• 8.0 W PAVE at < 2.0% EVM
• 25% Drain Efficiency at 8 W PAVE <

PDF File Details

Part number:

CGH35060P1

Manufacturer:

Wolfspeed

File Size:

1.43MB

Download:

📄 Datasheet

Description:

Gan hemt. Wolfspeed’s CGH35060F F1/P1 is a gallium nitride (GaN) high electron mobility transistor(HEMT) designed specifically for high efficie

CGH35060P1 Application

• Applications The transistor is supplied in a ceramic/metal flange and pill package. Wolfspeed GaN-on-Silicon Carbide instead HEMTs are highly corre

TAGS

CGH35060P1

Wolfspeed

📁 Related Datasheet

CGH35060P1 - GaN HEMT (Cree)
CGH35060F1 / CGH35060P1 60 W, 3.3-3.6 GHz, 28V, GaN HEMT for WiMAX, Broadband Wireless Access Cree’s CGH35060F is a gallium nitride (GaN) high electr.

CGH35060P2 - GaN HEMT (Wolfspeed)
CGH35060F2/P2 60 W, 3.1 - 3.5 GHz, 28 V, GaN HEMT Description Wolfspeed’s CGH35060F2/P2 is a gallium nitride (GaN) high electron mobility transistor (.

CGH35060F1 - GaN HEMT (Cree)
CGH35060F1 / CGH35060P1 60 W, 3.3-3.6 GHz, 28V, GaN HEMT for WiMAX, Broadband Wireless Access Cree’s CGH35060F is a gallium nitride (GaN) high electr.

CGH35060F1 - GaN HEMT (Wolfspeed)
CGH35060F1/P1 60 W, 3.3-3.6 GHz, 28V, GaN HEMT for WiMAX, Broadband Wireless Access Description Wolfspeed’s CGH35060F F1/P1 is a gallium nitride (GaN).

CGH35060F2 - GaN HEMT (Wolfspeed)
CGH35060F2/P2 60 W, 3.1 - 3.5 GHz, 28 V, GaN HEMT Description Wolfspeed’s CGH35060F2/P2 is a gallium nitride (GaN) high electron mobility transistor (.

CGH35015 - GaN HEMT (Cree)
CGH35015 15 W, 3300-3900 MHz, 28V, GaN HEMT for WiMAX Cree’s CGH35015 is a gallium nitride (GaN) high electron mobility transistor designed specifica.

CGH35015 - GaN HEMT (Wolfspeed)
CGH35015 15 W, 3.3-3.9 GHz, 28V, GaN HEMT for WiMAX Description Wolfspeed’s CGH35015 is a gallium nitride (GaN) high electron mobility transistor (HE.

CGH35015F - GaN HEMT (Cree)
PRELIMINARY CGH35015F 15 W, 3300-3900 MHz, 28V, GaN HEMT for WiMAX Cree’s CGH35015F is a gallium nitride (GaN) high electron mobility transistor desi.

CGH35030F - GaN HEMT (Cree)
PRELIMINARY CGH35030F 30 W, 3300-3900 MHz, 28V, GaN HEMT for WiMAX Cree’s CGH35030F is a gallium nitride (GaN) high electron mobility transistor (HEM.

CGH35030F - GaN HEMT (Wolfspeed)
CGH35030F 30 W, 3.3-3.9 GHz, 28V, GaN HEMT for WiMAX Description Wolfspeed’s CGH35030F is a gallium nitride (GaN) high electron mobility transistor (H.