Datasheet4U Logo Datasheet4U.com

CGH35030F

GaN HEMT

CGH35030F Features

* 3.3 - 3.9 GHz Operation

* 30 W Peak Power Capability

* 12 dB Small Signal Gain

* 4.0 W PAVE < 2.0% EVM

* 25% Efficiency at 4 W PAVE

* WiMAX Fixed Access 802.16-2004 OFDM

* WiMAX Mobile Access 802.16e OFDMA Large Signal Models Available for

CGH35030F General Description

Wolfspeed’s CGH35030F is a gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH35030F ideal for 3.3-3.9 GHz WiMAX and BWA amplifier applications. The transistor is supplied in a cerami.

CGH35030F Datasheet (2.34 MB)

Preview of CGH35030F PDF

Datasheet Details

Part number:

CGH35030F

Manufacturer:

Wolfspeed

File Size:

2.34 MB

Description:

Gan hemt.

📁 Related Datasheet

CGH35030F GaN HEMT (Cree)

CGH35015 GaN HEMT (Cree)

CGH35015 GaN HEMT (Wolfspeed)

CGH35015F GaN HEMT (Cree)

CGH35060F1 GaN HEMT (Cree)

CGH35060F1 GaN HEMT (Wolfspeed)

CGH35060F2 GaN HEMT (Wolfspeed)

CGH35060P1 GaN HEMT (Cree)

CGH35060P1 GaN HEMT (Wolfspeed)

CGH35060P2 GaN HEMT (Wolfspeed)

TAGS

CGH35030F GaN HEMT Wolfspeed

Image Gallery

CGH35030F Datasheet Preview Page 2 CGH35030F Datasheet Preview Page 3

CGH35030F Distributor