CGHV31500F Datasheet (Cree)

CGHV31500F, GaN HEMT

RES, 511, OHM, +/- 1%, 1/16W, 0603 RES, 5.1, OHM, +/- 1%, 1/16W, 0603 CAP, 6.8pF, +/-0.25%, 250V, 0603 CAP, 10.0pF, +/-1%, 250V, 0805 CAP, 10.0pF, +/-5%, 250V, 0603 CAP, 470pF, 5%, 100V, 0603, X CAP, 33000 pF, 0805, 100V, X7R CAP, 10uF 16V TANTALUM CAP, 1.0uF, 100V, 10%, X7R, 1210 CAP, 33uF, 20%, G

PRELIMINARY CGHV31500F 500 W, 2700 - 3100 MHz, 50-Ohm Input/Output Matched, GaN HEMT for S-Band Radar Systems Cree’s CGHV31500F is a gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically with high efficiency, high gain and wide bandwidth capabilities, which makes the CGHV31500F ideal for 2.7 - 3.1 GHz S-Band radar amplifier applications.

The transistor is supplied in a ceramic/metal flange package, type 440217.

PN: Package TCyGpHeV: 43410520107F Typical Performa

CGHV31500F Features

* 2.7 - 3.1 GHz Operation

* 675 W Typical Output Power

* 13.3 dB Power Gain

* 66% Typical Drain Efficiency

* 50 Ohm Internally Matched