CGHV31500F GaN HEMT

Cree

Description

PRELIMINARY CGHV31500F 500 W, 2700 - 3100 MHz, 50-Ohm Input/Output Matched, GaN HEMT for S-Band Radar Systems Cree’s CGHV31500F is a gallium nitride (.
RES, 511, OHM, +/- 1%, 1/16W, 0603 RES, 5.

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Datasheet Specifications

Part number: CGHV31500F
Manufacturer: Cree
File Size: 401.49 KB
Datasheet: CGHV31500F-Cree.pdf
Description: GaN HEMT

Features

* 2.7 - 3.1 GHz Operation
* 675 W Typical Output Power
* 13.3 dB Power Gain
* 66% Typical Drain Efficiency
* 50 Ohm Internally Matched

Applications

* The transistor is supplied in a ceramic/metal flange package, type 440217. PN: Package TCyGpHeV: 43410520107F Typical Performance Over 2.7-3.1 GHz (TC = 25˚C) of Demonstration Amplifier Parameter 2.7 GHz 2.9 GHz 3.1 GHz Output Power 665 705 645 Gain 13.2 13.5 13.1 Drain Efficiency 66

CGHV31500F Distributors

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CGHV31500F GaN HEMT Cree

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