CGHV35060MP Datasheet (Cree)

CGHV35060MP, GaN HEMT

PRELIMINARY CGHV35060MP 60W, 2700-3500 MHz, 50V, GaN HEMT for S Band Radar and LTE base stations Cree’s CGHV35060MP is a 60W input matched, gallium nitride (GaN) high electron mobility transistor (HEMT) optimized for S Band performance.

The CGHV35060MP is suitable for typical bands of 2.7-3.1GHz and 3.1-3.5GHz while the input matched transistor provides optimal gain, power and efficiency in a small 6.5mm x 4.4mm plastic surface mount (SMT) package.

The typical performance plots in the d

CGHV35060MP Features

* Reference design amplifier 3.1 - 3.5 GHz

* 75W Typical output power

* 14.5 dB power gain

* 67% Drain efficiency

* Internally pre-matched on input, unmatched output Rev 0

* April 2015 Subject to change without notice. www.cree.com/rf 1 Absolu