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TGF2023-20 Datasheet - TriQuint Semiconductor

100 Watt Discrete Power GaN on SiC HEMT

TGF2023-20 Features

* Frequency Range: DC - 18 GHz 49.6 dBm Nominal Psat at 3 GHz 52% Maximum PAE 17.5 dB Nominal Power Gain Bias: Vd = 28 - 32 V, Idq = 2 A, Vg = -3.6 V Typical Technology: 0.25 um Power GaN on SiC Chip Dimensions: 0.82 x 4.56 x 0.10 m

TGF2023-20 Datasheet (406.32 KB)

Preview of TGF2023-20 PDF

Datasheet Details

Part number:

TGF2023-20

Manufacturer:

TriQuint Semiconductor

File Size:

406.32 KB

Description:

100 watt discrete power gan on sic hemt.

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TGF2023-20 100 Watt Discrete Power GaN SiC HEMT TriQuint Semiconductor

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