TGF2023-20 100 Watt Discrete Power GaN on SiC HEMT

TriQuint Semiconductor

Description

TGF2023-20 90 Watt Discrete Power GaN on SiC HEMT Key .
Bias conditions: Vd = 28 V, Idq = 2 A, Vg = -3.

📥 Download Datasheet

TGF2023-20 Datasheet Preview — Preview of TGF2023-20 PDF

Datasheet Specifications

Part number: TGF2023-20
Manufacturer: TriQuint Semiconductor
File Size: 406.32 KB
Datasheet: TGF2023-20_TriQuintSemiconductor.pdf
Description: 100 Watt Discrete Power GaN on SiC HEMT

Features

* Frequency Range: DC - 18 GHz 49.6 dBm Nominal Psat at 3 GHz 52% Maximum PAE 17.5 dB Nominal Power Gain Bias: Vd = 28 - 32 V, Idq = 2 A, Vg = -3.6 V Typical Technology: 0.25 um Power GaN on SiC Chip Dimensions: 0.82 x 4.56 x 0.10 m

TGF2023-20 Distributors

📁 Related Datasheet

TGF2023-2-01 TGF2023-2-20 TGF2021-08 TGF24A TGF25A TGF2977-SM

📌 All Tags

TGF2023-20 100 Watt Discrete Power GaN SiC HEMT TriQuint Semiconductor

TriQuint Semiconductor TGF2023-20-like datasheet