TGF2023-20
TriQuint Semiconductor
406.32kb
100 watt discrete power gan on sic hemt. Bias conditions: Vd = 28 V, Idq = 2 A, Vg = -3.6 V Typical The TriQuint TGF2023-20 is a discrete 20 mm GaN on SiC HEMT which operate
📁 Related Datasheet
TGF2023-2-01 - SiC HEMT
(Qorvo)
TGF2023-2-01
® 6 W, 32 V, DC to 18 GHz, Discrete Power GaN on SiC HEMT
Product Overview
The Qorvo TGF2023-2-01 is a discrete 1.25 mm GaN on SiC HEMT .
TGF2023-2-01 - SiC HEMT
(TriQuint Semiconductor)
Applications
• Defense & Aerospace • Broadband Wireless
TGF2023-2-01
6 Watt Discrete Power GaN on SiC HEMT
Product Features
• Frequency Range: DC - .
TGF2023-2-02 - 12 Watt Discrete Power GaN on SiC HEMT
(TriQuint Semiconductor)
Applications
• Defense & Aerospace • Broadband Wireless
TGF2023-2-02
12 Watt Discrete Power GaN on SiC HEMT
Product Features
• Frequency Range: DC -.
TGF2023-2-05 - 25 Watt Discrete Power GaN on SiC HEMT
(TriQuint Semiconductor)
.
TGF2023-2-10 - 50 Watt Discrete Power GaN on SiC HEMT
(TriQuint Semiconductor)
Applications
• Defense & Aerospace • Broadband Wireless
TGF2023-2-10
50 Watt Discrete Power GaN on SiC HEMT
Product Features
• Frequency Range: DC -.
TGF2023-2-20 - 90 Watt Discrete Power GaN on SiC HEMT
(TriQuint)
.
TGF2023-2-20 - SiC HEMT
(Qorvo)
TGF2023-2-20
® 100 W, 32 V, DC to 14 GHz, Discrete Power GaN on SiC HEMT
Product Overview
The Qorvo TGF2023-2-20 is a discrete 20 mm GaN on SiC HEMT w.
TGF2023-01 - 6 Watt Discrete Power GaN on SiC HEMT
(TriQuint Semiconductor)
TGF2023-01
6 Watt Discrete Power GaN on SiC HEMT
Key Features
• • • • • • •
Frequency Range: DC - 18 GHz 38 dBm Nominal Psat at 3 GHz 66% Maximum PAE .
TGF2023-02 - 12 Watt Discrete Power GaN on SiC HEMT
(TriQuint Semiconductor)
TGF2023-02
12 Watt Discrete Power GaN on SiC HEMT
Key Features
• • • • • • •
Frequency Range: DC - 18 GHz 41 dBm Nominal Psat at 3 GHz 58% Maximum PAE.
TGF2023-05 - 25 Watt Discrete Power GaN on SiC HEMT
(TriQuint Semiconductor)
TGF2023-05
25 Watt Discrete Power GaN on SiC HEMT
Key Features
• • • • • • •
Frequency Range: DC - 18 GHz 43.9 dBm Nominal Psat at 3 GHz 56% Maximum P.
