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TGF2022-12

DC - 20 GHz Discrete power pHEMT

TGF2022-12 Features

* and Performance Frequency Range: DC - 20 GHz > 31 dBm Nominal Psat 58% Maximum PAE 39 dBm Nominal OIP3 13 dB Nominal Power Gain Suitable for high reliability applications 1.2mm x 0.35 m Power pHEMT Nominal Bias Vd = 8-12V, Idq = 90-150mA (Under RF Drive, Id rises from 90mA to 300mA) Chip Dimensions:

TGF2022-12 General Description

The TriQuint TGF2022-12 is a discrete 1.2 mm pHEMT which operates from DC-20 GHz. The TGF2022-12 is designed using TriQuint’s proven standard 0.35um power pHEMT production process. The TGF2022-12 typically provides > 31 dBm of saturated output power with www.DataSheet4U.com power gain of 13 dB. The .

TGF2022-12 Datasheet (134.16 KB)

Preview of TGF2022-12 PDF

Datasheet Details

Part number:

TGF2022-12

Manufacturer:

TriQuint Semiconductor

File Size:

134.16 KB

Description:

Dc - 20 ghz discrete power phemt.
Advance Product Information September19, 2005 DC - 20 GHz Discrete power pHEMT

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TAGS

TGF2022-12 GHz Discrete power pHEMT TriQuint Semiconductor

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