pHEMT Datasheet | Specifications & PDF Download

MwT-PH7F 28 GHz Medium Power AlGaAs/InGaAs pHEMT Features: • 24.5 dBm of Power at 18 GHz • 15 dB typical Small Signal Gain at 18 GHz • 45% typical P

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HMC487LP5 / 487LP5E v01.0705 www.DataSheet4U.com SURFACE MOUNT PHEMT 2 WATT POWER AMPLIFIER, 9 - 12 GHz 5 AMPLIFIERS - SMT Typical Applications Th

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MwT-PH11F/MwT-PH11FV 12 GHz High Power AlGaAs/InGaAs pHEMT Features: • 33 dBm of Power at 12 GHz • 12 dB Small Signal Gain at 12 GHz • 45% PAE at 12

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HMC903 v00.0310 www.DataSheet4U.com GaAs pHEMT MMIC LOW NOISE AMPLIFIER, 6 - 18 GHz Features Low Noise Figure: 1.6 dB High Gain: 19 dB P1dB Output P

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MwT-PH11F/MwT-PH11FV 12 GHz High Power AlGaAs/InGaAs pHEMT Features: • 33 dBm of Power at 12 GHz • 12 dB Small Signal Gain at 12 GHz • 45% PAE at 12

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LOW NOISE AMPLIFIERS - SMT v04.0514 Typical Applications The HMC342LC4 is ideal for: • Point-to-Point Radios • Point-to-Multi-Point Radios & VSAT • T

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HIGH PERFORMANCE LOW NOISE PHEMT • FEATURES ♦ 1.0 dB Noise Figure at 18 GHz ♦ 10 dB Associated Gain at 18 GHz ♦ Low DC Power Consumption LPS200 GATE

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PRELIMINARY DATA SHEET FP100 HIGH PERFORMANCE PHEMT • FEATURES ♦ 14 dBm P-1dB at 12 GHz ♦ 9 dB Power Gain at 12 GHz ♦ 3.0 dB Noise Figure at 12 GHz

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MwT-PH33F 26 GHz Medium Power AlGaAs/InGaAs pHEMT Features: • 24 dBm of Power at 18 GHz • 14 dB Small Signal Gain at 18 GHz • 45% typical PAE at 18 GH

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SPF5189Z 50MHz to 4000MHz, GaAs pHEMT Low Noise MMIC Amplifier SPF5189Z 50MHz to 4000MHz, GaAs pHEMT LOW NOISE MMIC AMPLIFIER Product Description Th

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MwT-LN600 26 GHz Super Low Noise pHEMT Device May 2010 FEATURES 0.50 dB Minimum Noise Figure at 12 GHz 8.0 dB Associated Gain at 12 GHz 20.0 dBm P1dB

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Freescale Semiconductor Technical Data Document Number: MML09211H Rev. 1, 9/2014 Enhancement Mode pHEMT Technology (E--pHEMT) Low Noise Amplifier Th

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Freescale Semiconductor Technical Data Document Number: MML20211H Rev. 1, 9/2014 Enhancement Mode pHEMT Technology (E--pHEMT) Low Noise Amplifier Th

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Freescale Semiconductor Technical Data Document Number: MML20242H Rev. 2, 9/2014 Enhancement Mode pHEMT Technology (E--pHEMT) Low Noise Amplifier Th

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Amplifiers - Linear & Power - Chip Preliminary Typical Applications The HMC1022A is ideal for: • Test Instrumentation • Microwave Radio & VSAT • Mili

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FPD1000AS 1W PACKAGED POWER PHEMT • PERFORMANCE (1.8 GHz) ♦ 31 dBm Output Power (P1dB) ♦ 15 dB Power Gain (G1dB) ♦ 43 dBm Output IP3 ♦ -42 dBc WCDMA A

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E-pHEMT MMIC Product Features • Small size • Higher Gain • Higher linearity • SOIC-8 SMD Type package • Higher productivity • Lower manufacturing cost

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BCL016B SUPER LOW NOISE PHEMT CHIP (.15µm x 160µm) The BeRex BCL016B is a GaAs super low noise pHEMT with a nominal 0.15 micron gate length and 160 mi

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AMPLIFIERS - LINEAR & POWER - SMT HMC5805ALS6 v01.1216 GaAs pHEMT MMIC 0.25 WATT POWER AMPLIFIER DC - 40 GHz Typical Applications The HMC5805ALS6 is

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BCL016B-343 SUPER LOW NOISE PHEMT IN SOT-343 PACKAGE The BeRex BCL016B-343 is a GaAs super low noise pHEMT in a standard SOT-343 plastic package. It

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