pHEMT Datasheet | Specifications & PDF Download

SPF5189Z 50MHz to 4000MHz, GaAs pHEMT Low Noise MMIC Amplifier SPF5189Z 50MHz to 4000MHz, GaAs pHEMT LOW NOISE MMIC AMPLIFIER Product Description Th

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LP3000SOT89 LOW NOISE, HIGH LINEARITY PACKAGED PHEMT • FEATURES ♦ 29 dBm Output Power at 1-dB Compression at 1.8 GHz ♦ 15 dB Power Gain at 1.8 GHz ♦ 1

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Advanced Information SPF-5043Z Product Description The SPF-5043Z is a high performance pHEMT MMIC LNA designed for operation from 400-3000 MHz. The o

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Preliminary Data Sheet 1.0 FMS2002QFN ES1 SP3T Reflective pHEMT MMIC Switch Description The FMS2002QFN is a linear high power Single-Pole Three-Thr

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TC2282 REV3_20070504 Low Noise Ceramic Packaged PHEMT GaAs FETs FEATURES • • • • • • 0.5 dB Typical Noise Figure at 12 GHz High Associated Gain: Ga =

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Preliminary SUF-2000 Product Description Sirenza Microdevices’ SUF-2000 is a monolithically matched broadband high IP3 gain block covering 0.05-10 GH

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LINEAR & POWER AMPLIFIERS - SMT HMC441LP3 / 441LP3E v05.0812 GaAs pHEMT MMIC MEDIUM POWER AMPLIFIER, 6.5 - 13.5 GHz Typical Applications The HMC44

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LINEAR & POWER AMPLIFIERS - SMT HMC441LP3 / 441LP3E v05.0812 GaAs pHEMT MMIC MEDIUM POWER AMPLIFIER, 6.5 - 13.5 GHz Typical Applications The HMC44

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PRELIMINARY DATA SHEET FP750SOT343 PACKAGED LOW NOISE, MEDIUM POWER PHEMT • FEATURES ♦ 0.5 dB Noise Figure at 2 GHz ♦ 21 dBm P-1dB 2 GHz ♦ 17 dB Pow

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EC2612 RoHS COMPLIANT 40GHz Super Low Noise pHEMT Pseudomorphic High Electron Mobility Transistor Description The EC2612 is based on a 0.15µm gate ps

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Preliminary Data Sheet 2.2 FMS2001QFN SPDT Reflective pHEMT MMIC Switch Description The FMS2001QFN is a low loss linear Single-Pole Double-Throw Ant

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www.DataSheet.net/ Datasheet pdf - http://www.DataSheet4U.co.kr/ www.DataSheet.net/ Datasheet pdf - http://www.DataSheet4U.co.kr/ www.DataSheet.ne

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TC3889 PRE.2_04/27/2005 Preliminary 5W Packaged Self-Bias PHEMT GaAs Power FETs FEATURES • • • • • • • • 5W Typical Output Power 12dB Typical Linea

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data sheet AS200-313LF: PHEMT GaAs IC 2 W High-Linearity 5–6 GHz T/R Switch Applications l Simplified Block Diagram J2 CBL T/R switch in WLAN 802.1

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EC2612-99F 40GHz Super Low Noise pHEMT Pseudomorphic High Electron Mobility Transistor Description The EC2612-99F is based on a 0.15µm gate pseudomor

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PACKAGED 2W POWER PHEMT • FEATURES ♦ 33 dBm Output Power at 1-dB Compression at 15 GHz ♦ 8 dB Power Gain at 15 GHz ♦ 60% Power-Added Efficiency LP300

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General Purpose Packaged PHEMT Chips AFP02N8-212, AFP02N8-213 Features s Low Noise Figure, 1.55 dB @ 4 GHz s High Associated Gain, 13 dB @ 4 GHz s Hig

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Preliminary Data Sheet • FEATURES ♦ 28 dBm Output Power at 1-dB Compression at 1.8 GHz ♦ 19 dB Power Gain at 1.8 GHz ♦ 1.0 dB Noise Figure ♦ 45 dBm Ou

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DATA SHEET AS193-73, AS193-73LF: PHEMT GaAs IC High-Linearity 3 V Control SPDT Switch 0.1–2.5 GHz Features ● 2.5 to 5 V linear operation ● Harmonics

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PHEMT GaAs IC 2 W High Linearity 5–6 GHz T/R Switch AS200-313 Applications ■ T/R Switch in WLAN 802.11a Systems QFN-6 0.078 (2.00 mm) BSC PIN 1 INDIC

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