TC2282
FEATURES
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- - 0.5 d B Typical Noise Figure at 12 GHz High Associated Gain: Ga = 12 d B Typical at 12 GHz Lg = 0.25 µm, Wg = 300 µm Tight Vp ranges control High RF input power handling capability 100 % DC Tested Micro-X Metal Ceramic Package
PHOTO ENLARGEMENT
- DESCRIPTION
The TC2282 is a high performance field effect transistor housed in a ceramic micro-x package with TC1202 PHEMT Chip. It has very low noise figure, high associated gain and high dynamic range that makes this device suitable for use in low noise amplifiers. All devices are 100 % DC tested to assure consistent quality.
ELECTRICAL SPECIFICATIONS (TA=25 °C)
Symbol NF Ga IDSS gm VP BVDGO Rth CONDITIONS Noise Figure at VDS = 4 V, IDS = 25 m A, f = 12GHz Associated Gain at VDS = 4 V, IDS = 25 m A, f = 12GHz Saturated Drain-Source Current at VDS = 2 V, VGS = 0 V Transconductance at VDS = 2 V, VGS = 0 V Pinch-off Voltage at VDS = 2 V, ID = 0.6m A Drain-Gate Breakdown Voltage at IDGO = 0.15m A Thermal Resistance
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