TC2281 Datasheet PDF

Transcom TC2281

The TC2281 is a high performance field effect transistor housed in a ceramic micro-x package with TC1201 PHEMT Chip. It has very low noise figure, high associated gain and high dynamic range that makes this device suitable for use in low noise amplifiers. For special Vp requirement, please contact factory for details.

Part No.	TC2281
Datasheet	TC2281 Download
Manufacturer	Transcom
Description	Low Noise and High Dynamic Range Packaged GaAs FETs
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FEATURES

! ! ! ! ! ! ! ! ! ! 0.5 dB Typical Noise Figure at 12 GHz High Associated Gain: Ga = 12 dB Typical at 12 GHz 21.5 dBm Typical Power at 12 GHz 12 dB Typical Linear Power Gain at 12 GHz Breakdown Voltage : BVDGO ≥ 9 V Lg = 0.25 µm, Wg = 300 µm Tight Vp ranges control High RF input power handling capability 100 % DC Tested Micro-X Metal Ceramic Package PHOTO ENLARGEMENT

DESCRIPTION

All devices are 100 % DC tested to assure consistent quality.

ELECTRICAL SPECIFICATIONS

(TA=25 °C) Symbol NF Ga P1dB GL IDSS gm VP BVDGO Rth Conditions Noise Figure at VDS = 4 V, IDS = 25 mA, f = 12GHz MIN 10 20.5 11 TYP 0.5 12 21.5 12 90 100 -1.0* MAX 0.7 UNIT dB dB dBm dB mA mS Volts Volts °C/W Associated Gain at VDS = 4 V, IDS = 25 mA, f Linear Power Gain, f = 12GHz = 12GHz VDS = 6 V, IDS = 40 mA Output Power at 1dB Gain Compression Point, f = 12GHz VDS = 6 V, IDS = 40 mA Saturated Drain-Source Current at VDS = 2 V, VGS = 0 V Transconductance at VDS = 2 V, VGS = 0 V Pinch-off Voltage at VDS = 2 V, I...