TC2281 Datasheet | Transcom

REV4_20070504 Low Noise and High Dynamic Range Packaged GaAs FETs Features ! ! ! ! ! ! ! ! ! ! 0.5 dB Typical Noise Figure at 12 GHz High Associated Gain: Ga = 12 dB Typical at 12 GHz 21.5 dBm Typical Power at 12 GHz 12 dB Typical Linear Power Gain at 12 GHz Breakdown Voltage : BVDGO ≥ 9 V Lg = 0.25 µm, Wg = 300 µm Tight Vp ranges control High RF input power handling capability 100 % DC Tested Micro-X Metal Ceramic Package PHOTO ENLARGEMENT DESCRIPTION The TC2281 is a high performance field effect transistor housed in a ceramic micro-x package with TC1201 PHEMT Chip. It has very low noise figure, high associated gain and high dynamic range that makes this device suitable for use...