TC2282 Datasheet | Transcom

REV3_20070504 Low Noise Ceramic Packaged PHEMT GaAs FETs Features - - - - - - 0.5 dB Typical Noise Figure at 12 GHz High Associated Gain: Ga = 12 dB Typical at 12 GHz Lg = 0.25 µm, Wg = 300 µm Tight Vp ranges control High RF input power handling capability 100 % DC Tested Micro-X Metal Ceramic Package PHOTO ENLARGEMENT - DESCRIPTION The TC2282 is a high performance field effect transistor housed in a ceramic micro-x package with TC1202 PHEMT Chip. It has very low noise figure, high associated gain and high dynamic range that makes this device suitable for use in low noise amplifiers. All devices are 100 % DC tested to assure consistent quality. ELECTRICAL SPECIFICATIONS (TA=25...