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TC2282 - Low Noise Ceramic Packaged PHEMT GaAs FETs

General Description

The TC2282 is a high performance field effect transistor housed in a ceramic micro-x package with TC1202 PHEMT Chip.

It has very low noise figure, high associated gain and high dynamic range that makes this device suitable for use in low noise amplifiers.

Key Features

  • 0.5 dB Typical Noise Figure at 12 GHz High Associated Gain: Ga = 12 dB Typical at 12 GHz Lg = 0.25 µm, Wg = 300 µm Tight Vp ranges control High RF input power handling capability 100 % DC Tested Micro-X Metal Ceramic Package PHOTO.

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Datasheet Details

Part number TC2282
Manufacturer Transcom
File Size 280.81 KB
Description Low Noise Ceramic Packaged PHEMT GaAs FETs
Datasheet download datasheet TC2282 Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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TC2282 REV3_20070504 Low Noise Ceramic Packaged PHEMT GaAs FETs FEATURES • • • • • • 0.5 dB Typical Noise Figure at 12 GHz High Associated Gain: Ga = 12 dB Typical at 12 GHz Lg = 0.25 µm, Wg = 300 µm Tight Vp ranges control High RF input power handling capability 100 % DC Tested Micro-X Metal Ceramic Package PHOTO ENLARGEMENT • DESCRIPTION The TC2282 is a high performance field effect transistor housed in a ceramic micro-x package with TC1202 PHEMT Chip. It has very low noise figure, high associated gain and high dynamic range that makes this device suitable for use in low noise amplifiers. All devices are 100 % DC tested to assure consistent quality.