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BF1201WR - N-channel dual-gate PoLo MOS-FETs

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NXP

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BF1201WR N-channel dual-gate PoLo MOS-FETs by NXP - Datasheet Preview — Datasheet preview – BF1201WR

Datasheet Details

Part number	BF1201WR
Manufacturer	NXP
File Size	113.99 KB
Description	N-channel dual-gate PoLo MOS-FETs
Datasheet	BF1201WR Datasheet
Additional preview pages of the BF1201WR datasheet.

BF1201WR Product details

Description

Simplified outline (SOT143R).

DESCRIPTION Enhancement type N-channel field-effect transistor with source and substrate interconnected.

Features

Short channel transistor with high forward transfer admittance to input capacitance ratio.
Low noise gain controlled amplifier.
Partly internal self-biasing circuit to ensure good cross-modulation performance during AGC and good DC stabilization.

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Published: Mar 23, 2005 |