BF1201WR Datasheet | NXP Semiconductors

DISCRETE SEMICONDUCTORS DATA SHEET BF1201; BF1201R; BF1201WR N-channel dual-gate Po Lo MOS-FETs Product specification Supersedes data of 1999 Dec 01 2000 Mar 29 Philips Semiconductors Product specification N-channel dual-gate Po Lo MOS-FETs Features - Short channel transistor with high forward transfer admittance to input capacitance ratio - Low noise gain controlled amplifier - Partly internal self-biasing circuit to ensure good cross-modulation performance during AGC and good DC stabilization. APPLICATIONS - VHF and UHF applications with 3 to 9 V supply voltage, such as digital and analogue television tuners and professional munications equipment. handbook, 2 columns 4 BF1201; BF1201R; BF1201WR PINNING PIN 1 2 3 4 DESCRIPTION source drain gate 2 gate 1 Top view MSB035 handbook, 2 columns 3 BF1201R marking code: LBp Fig.2 Simplified outline (SOT143R). 3 page DESCRIPTION Enhancement type N-channel field-effect transistor with source and substrate interconnected. Integrated diodes between gates and source protect against excessive input voltage surges. The BF1201, BF1201R and BF1201WR are encapsulated in the SOT143B, SOT143R and SOT343R plastic packages respectively. QUICK REFERENCE DATA SYMBOL VDS ID Ptot yfs Cig1-ss Crss F Xmod Tj PARAMETER drain-source voltage drain current total power dissipation forward transfer admittance input capacitance at gate 1 reverse transfer capacitance noise figure cross-modulation operating junction temperature CAUTION This product is supplied in anti-static packing to prevent damage caused by electrostatic discharge during transport and handling. For further information, refer to Philips specs.: SNW-EQ-608, SNW-FQ-302A and SNW-FQ-302B. 2000 Mar 29 2 f = 1 MHz f = 400 MHz input level for k = 1% at 40 d B AGC CONDITIONS - - - 23 - - - 105 - MIN. - - - 28 2.6 15 1 - - TYP. MAX. 10 30 200 35 3.1 30 1.8 - 150 UNIT V m A m W m S p F f F d B d BµV...