NXP Semiconductors BF1201WR
The BF1201, BF1201R and BF1201WR are encapsulated in the SOT143B, SOT143R and SOT343R plastic packages respectively. For further information, refer to Philips specs.: SNW-EQ-608, SNW-FQ-302A and SNW-FQ-302B.| Part No. | BF1201WR |
|---|---|
| Datasheet | BF1201WR Download |
| Manufacturer |  NXP Semiconductors |
| Description | N-channel dual-gate PoLo MOS-FETs |
| Buy | Stock & Price |
FEATURES
● Short channel transistor with high forward transfer admittance to input capacitance ratio● Low noise gain controlled amplifier
● Partly internal self-biasing circuit to ensure good cross-modulation performance during AGC and good DC stabilization.
APPLICATIONS
● VHF and UHF applications with 3 to 9 V supply voltage, such as digital and analogue television tuners and professional communications equipment. handbook, 2 columns 4 BF1201; BF1201R; BF1201WR PINNING PIN 1 2 3 4DESCRIPTION
source drain gate 2 gate 1 Top view MSB035 handbook, 2 columns 3 4 2 1 BF1201R marking code: LBp Fig.2 Simplified outline (SOT143R). 3 page 3 4DESCRIPTION
Enhancement type N-channel field-effect transistor with source and substrate interconnected. Integrated diodes between gates and source protect against excessive input voltage surges. QUICK REFERENCE DATA SYMBOL VDS ID Ptot yfs Cig1-ss Crss F Xmod Tj PARAMETER drain-source voltage drain current total power dissipation forward transfer admit...
