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BF1202R Datasheet N-channel Dual-gate Polo Mos-fets

Manufacturer: NXP Semiconductors

Overview: DISCRETE SEMICONDUCTORS DATA SHEET BF1202; BF1202R; BF1202WR N-channel dual-gate PoLo MOS-FETs Product specification Supersedes data of 1999 Dec 01 2000 Mar 29 Philips Semiconductors Product specification N-channel.

General Description

source drain gate 2 gate 1 Top view MSB035 handbook, 2 columns 3 4 2 1 BF1202R marking code: LEp Fig.2 Simplified outline (SOT143R).

3 page 3 4 DESCRIPTION Enhancement type N-channel field-effect transistor with source and substrate interconnected.

Integrated diodes between gates and source protect against excessive input voltage surges.

Key Features

  • Short channel transistor with high forward transfer admittance to input capacitance ratio.
  • Low noise gain controlled amplifier.
  • Partly internal self-biasing circuit to ensure good cross-modulation performance during AGC and good DC stabilization.

More Datasheets from NXP Semiconductors

Part Number Description
BF1202 N-channel dual-gate PoLo MOS-FETs
BF1202WR N-channel dual-gate PoLo MOS-FETs
BF1201 N-channel dual-gate PoLo MOS-FETs
BF1201R N-channel dual-gate PoLo MOS-FETs
BF1201WR N-channel dual-gate PoLo MOS-FETs
BF1203 Dual N-channel dual gate MOS-FET
BF1204 Dual N-channel dual gate MOS-FET
BF1205 Dual N-channel dual gate MOS-FET
BF1205C Dual N-channel dual gate MOS-FET
BF1206 Dual N-channel dual-gate MOS-FET

BF1202R Distributor