Part BF1202R
Description N-channel dual-gate PoLo MOS-FETs
Category MOSFET
Manufacturer NXP Semiconductors
Size 116.06 KB
NXP Semiconductors

BF1202R Overview

Description

Enhancement type N-channel field-effect transistor with source and substrate interconnected. Integrated diodes between gates and source protect against excessive input voltage surges.

Key Features

  • Short channel transistor with high forward transfer admittance to input capacitance ratio
  • Low noise gain controlled amplifier
  • Partly internal self-biasing circuit to ensure good cross-modulation performance during AGC and good DC stabilization. APPLICATIONS