BF1202 - N-channel dual-gate PoLo MOS-FETs

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NXP

BF1202 N-channel dual-gate PoLo MOS-FETs by NXP - Datasheet Preview — Datasheet preview – BF1202

Datasheet Details

Part number	BF1202
Manufacturer	NXP
File Size	116.06 KB
Description	N-channel dual-gate PoLo MOS-FETs
Datasheet	BF1202 Datasheet
Additional preview pages of the BF1202 datasheet.

Product details

Description

source drain gate 2 gate 1 Top view MSB035 handbook, 2 columns 3 4 2 1 BF1202R marking code: LEp Fig.2 Simplified outline (SOT143R).3 page 3 4 DESCRIPTION Enhancement type N-channel field-effect transistor with source and substrate interconnected.Integrated diodes between gates and source protect against excessive input voltage surges.The BF1202, BF1202R and BF1202WR are encapsulated in the SOT143B, SOT143R and SOT343R plastic packages respectively.QUICK REFERENCE DATA SYMBOL VDS

Features

Short channel transistor with high forward transfer admittance to input capacitance ratio.
Low noise gain controlled amplifier.
Partly internal self-biasing circuit to ensure good cross-modulation performance during AGC and good DC stabilization.

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Other Datasheets by NXP

BF1202R - N-channel dual-gate PoLo MOS-FETs
BF1202WR - N-channel dual-gate PoLo MOS-FETs
BF1201 - N-channel dual-gate PoLo MOS-FETs
BF1201R - N-channel dual-gate PoLo MOS-FETs
BF1201WR - N-channel dual-gate PoLo MOS-FETs
BF1203 - Dual N-channel dual gate MOS-FET

Published: Mar 23, 2005 |