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BF1201R

Manufacturer: NXP Semiconductors

BF1201R datasheet by NXP Semiconductors.

BF1201R datasheet preview

BF1201R Datasheet Details

Part number BF1201R
Datasheet BF1201R_PhilipsSemiconductors.pdf
File Size 113.99 KB
Manufacturer NXP Semiconductors
Description N-channel dual-gate PoLo MOS-FETs
BF1201R page 2 BF1201R page 3

BF1201R Overview

source drain gate 2 gate 1 Top view MSB035 handbook, 2 columns 3 4 2 1 BF1201R marking code: LBp Fig.2 Simplified outline (SOT143R). 3 page 3 4 DESCRIPTION Enhancement type N-channel field-effect transistor with source and substrate interconnected.

BF1201R Key Features

  • Short channel transistor with high forward transfer admittance to input capacitance ratio
  • Low noise gain controlled amplifier
  • Partly internal self-biasing circuit to ensure good cross-modulation performance during AGC and good DC stabilization

BF1201R Applications

  • VHF and UHF applications with 3 to 9 V supply voltage, such as digital and analogue television tuners and professional munications equipment
NXP Semiconductors logo - Manufacturer

More Datasheets from NXP Semiconductors

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Part Number Description
BF1201 N-channel dual-gate PoLo MOS-FETs
BF1201WR N-channel dual-gate PoLo MOS-FETs
BF1202 N-channel dual-gate PoLo MOS-FETs
BF1202R N-channel dual-gate PoLo MOS-FETs
BF1202WR N-channel dual-gate PoLo MOS-FETs
BF1203 Dual N-channel dual gate MOS-FET
BF1204 Dual N-channel dual gate MOS-FET
BF1205 Dual N-channel dual gate MOS-FET
BF1205C Dual N-channel dual gate MOS-FET
BF1206 Dual N-channel dual-gate MOS-FET

BF1201R Distributor

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