BF1202WR Overview
source drain gate 2 gate 1 Top view MSB035 handbook, 2 columns 3 4 2 1 BF1202R marking code: LEp Fig.2 Simplified outline (SOT143R). 3 page 3 4 DESCRIPTION Enhancement type N-channel field-effect transistor with source and substrate interconnected.
BF1202WR Key Features
- Short channel transistor with high forward transfer admittance to input capacitance ratio
- Low noise gain controlled amplifier
- Partly internal self-biasing circuit to ensure good cross-modulation performance during AGC and good DC stabilization
BF1202WR Applications
- VHF and UHF applications with 3 to 9 V supply voltage, such as digital and analogue television tuners and professional munications equipment