NXP Semiconductors BF1202WR
The BF1202, BF1202R and BF1202WR are encapsulated in the SOT143B, SOT143R and SOT343R plastic packages respectively. For further information, refer to Philips specs.: SNW-EQ-608, SNW-FQ-302A and SNW-FQ-302B.| Part No. | BF1202WR |
|---|---|
| Datasheet | BF1202WR Download |
| Manufacturer |  NXP Semiconductors |
| Description | N-channel dual-gate PoLo MOS-FETs |
| Buy | Stock & Price |
FEATURES
● Short channel transistor with high forward transfer admittance to input capacitance ratio● Low noise gain controlled amplifier
● Partly internal self-biasing circuit to ensure good cross-modulation performance during AGC and good DC stabilization.
APPLICATIONS
● VHF and UHF applications with 3 to 9 V supply voltage, such as digital and analogue television tuners and professional communications equipment. handbook, 2 columns 4 BF1202; BF1202R; BF1202WR PINNING PIN 1 2 3 4DESCRIPTION
source drain gate 2 gate 1 Top view MSB035 handbook, 2 columns 3 4 2 1 BF1202R marking code: LEp Fig.2 Simplified outline (SOT143R). 3 page 3 4DESCRIPTION
Enhancement type N-channel field-effect transistor with source and substrate interconnected. Integrated diodes between gates and source protect against excessive input voltage surges. QUICK REFERENCE DATA SYMBOL VDS ID Ptot yfs Cig1-ss Crss F Xmod Tj PARAMETER drain-source voltage drain current total power dissipation forward transfer admit...
